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MC10H602FN

Onsemi

MC10H602FN by Onsemi

MC10H602FN by Onsemi is a voltage level translator with 28 terminals, operating at 4.5-5.5V. It has a max delay of 3.2ns and operates in temperatures from 0 to 75 °C. Ideal for TTL to ECL translation applications due to its ECL10K technology and open-emitter output characteristics.

Median Price

$11.540

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 7 parts In-Stock

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$11.540

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$8.650

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Digiode

USA . 1,360 parts In-Stock

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Vyrian

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Q Components

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Bristol Electronics

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Atlantic Semiconductor

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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R&J Components

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Connector Distribution Corp

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Right Parts Inc.

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J & M Industries LLC

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Distributors (Availability)

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Corohmni

South Africa . 494 parts In-Stock

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Problanco Electronics

Mexico . 7,759 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 4,429 parts In-Stock

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Corphita

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UHIMA Technologies

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Microchip USA

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Kepictronics

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TANS Electronics

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Assy Fe

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Overview

Unlock new possibilities with the MC10H602FN by Onsemi. This voltage level translator offers top-notch quality and reliability, backed by Onsemi's stellar reputation in the industry. Ideal for a wide range of applications, this product provides seamless voltage translation with ease. Experience the value and benefits of this device, from its compact package design to its efficient performance. Take your projects to the next level with the MC10H602FN.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Maximum Supply Voltage: 5.5 V

Can handle high voltages without causing damage, offering reliability in various applications.

Minimum Operating Temperature: 0 °C

Can operate in very low temperatures, making it suitable for extreme environments.

Output Polarity: TRUE

Provides accurate signal conversion between TTL and ECL technologies, maintaining signal integrity.

Maximum Delay: 3.2 ns

Offers fast signal translation, ensuring efficient communication between different devices.

Technical Specifications

Voltage Level Translators MC10H602FN attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

3.2 ns

Interface IC Type:

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e0

Length:

11.505 mm

Moisture Sensitivity Level (MSL):

1

Nominal Negative Supply Voltage:

-5.2 V

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

235

Power Supplies (V):

5,-5.2

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL10K

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Trade Compliance

MC10H602FN Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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