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MC10H124MR2

Onsemi

MC10H124MR2 by Onsemi

MC10H124MR2 by Onsemi is a TTL to ECL translator with 4 functions, operating at 5V. It has a delay of 3.1ns and operates in temperatures from 0 to 75 °C. Ideal for voltage level translation applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 261 parts In-Stock

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Digiode

USA . 100 parts In-Stock

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Kulean Microsystems

USA . 7,412 parts In-Stock

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TANS Electronics

Latvia . 3,357 parts In-Stock

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Problanco Electronics

Mexico . 2,842 parts In-Stock

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Corphita

USA . 1,083 parts In-Stock

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UHIMA Technologies

Türkiye . 467 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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SupplyDigital Components

Austria . 34 parts In-Stock

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Overview

Experience seamless voltage level translation with the MC10H124MR2 by Onsemi. Crafted with precision and expertise, this compact device offers unparalleled performance and reliability. Perfect for a wide range of applications, this voltage level translator from Onsemi ensures smooth data transfer and optimal signal integrity. Trust in the quality and innovation of Onsemi to elevate your projects to new heights. Choose the MC10H124MR2 and unlock a world of possibilities with its advanced technology and exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Maximum Supply Voltage: 5.25 V

This high maximum supply voltage allows for compatibility with a wide range of systems and applications.

No. of Functions: 4

Having multiple functions in a single device increases efficiency and saves space in a circuit design.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature ensures reliable performance even in harsh environmental conditions.

Nominal Negative Supply Voltage: -5.2 V

The availability of a negative supply voltage allows for versatility in powering options for the device.

Technical Specifications

Voltage Level Translators MC10H124MR2 attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

3.1 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Length:

10.2 mm

Nominal Negative Supply Voltage:

-5.2 V

No. of Bits:

2

No. of Functions:

4

No. of Terminals:

16

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

2.05 mm

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5.275 mm

Trade Compliance

MC10H124MR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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