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MC10EP51DTR2

Onsemi

MC10EP51DTR2 by Onsemi

MC10EP51DTR2 by Onsemi is a ECL technology latch with 0.37 ns propagation delay, 3.3V nominal supply, and 3000000000 Hz max frequency. Ideal for industrial applications requiring positive edge trigger and complementary output polarity in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,428 parts In-Stock

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Digiode

USA . 2,282 parts In-Stock

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AZTECH Wire

Italy . 786 parts In-Stock

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$22.050

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786

$22.050

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TANS Electronics

Latvia . 7,965 parts In-Stock

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SupplyDigital Components

Austria . 4,954 parts In-Stock

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Kulean Microsystems

USA . 4,889 parts In-Stock

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Problanco Electronics

Mexico . 3,016 parts In-Stock

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Corphita

USA . 1,520 parts In-Stock

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Microchip USA

USA . 477 parts In-Stock

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Corohmni

South Africa . 317 parts In-Stock

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UHIMA Technologies

Türkiye . 223 parts In-Stock

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Overview

Elevate your electronics projects with the MC10EP51DTR2 by Onsemi. Crafted with precision and expertise, this powerful latches & flip-flops device offers lightning-fast 0.42 ns propagation delay, ensuring seamless performance. With a small outline and thin profile, this versatile component is perfect for a wide range of applications. From industrial automation to telecommunications, this product delivers unmatched value and reliability. Trust Onsemi for top-tier quality and innovation that will take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the latch durable and resistant to damage, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 0.42 ns

The low propagation delay allows for fast operation and response times, making this latch suitable for high-speed applications.

Surface Mount: YES

Being surface mountable means easy installation and space-saving design, making it convenient for compact electronic devices.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V nominal supply voltage is common in many electronic systems, ensuring compatibility with a wide range of applications.

Trigger Type: POSITIVE EDGE

Positive edge triggering ensures reliable and accurate operation, making this latch suitable for critical timing applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows the latch to function reliably in a variety of environmental conditions, including industrial settings.

Technology: ECL

The ECL technology offers high-speed performance and low power consumption, making this latch ideal for applications requiring efficient operation.

Technical Specifications

Latches & Flip-Flops MC10EP51DTR2 attributes and parameters. Explore more Latches & Flip-Flops devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -3V TO -5.5V

Family:

10E

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Length:

3 mm

Logic IC Type:

Maximum Frequency At Nominal Supply:

3000000000 Hz

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

235

Power Supplies (V):

-5.2

Maximum Power Supply Current (ICC):

47 mA

Propagation Delay At Nominal Supply:

.42 ns

Propagation Delay (tpd):

.37 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

FF/Latches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Trigger Type:

POSITIVE EDGE

Width:

3 mm

Trade Compliance

MC10EP51DTR2 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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