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MC100H601FNR2G

Onsemi

MC100H601FNR2G by Onsemi

MC100H601FNR2G by Onsemi is a voltage level translator with 9 functions, operating b/w -4.5V to 5.5V. It features ECL TO TTL translation technology, 9.6ns max delay, and 3-STATE output characteristics. Ideal for applications requiring precise signal translation in compact spaces with high-speed requirements.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,477 parts In-Stock

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Digiode

USA . 1,552 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,358 parts In-Stock

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TANS Electronics

Latvia . 5,095 parts In-Stock

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SupplyDigital Components

Austria . 4,987 parts In-Stock

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Kulean Microsystems

USA . 4,704 parts In-Stock

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Problanco Electronics

Mexico . 3,754 parts In-Stock

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Corphita

USA . 684 parts In-Stock

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UHIMA Technologies

Türkiye . 567 parts In-Stock

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Microchip USA

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Corohmni

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Overview

Discover the MC100H601FNR2G by Onsemi, a cutting-edge Voltage Level Translator designed to provide seamless voltage conversion with superior performance. Onsemi's reputation for excellence ensures top-notch quality and reliability. Ideal for a wide range of applications, this product offers unmatched value, benefits, and advantages to customers looking for efficient and effective voltage level translation solutions. Experience the difference with the MC100H601FNR2G and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the voltage level translator.

Surface Mount: YES

Easy to install on a circuit board, saving time and effort during assembly.

Maximum Supply Voltage: 5.5 V

Supports a wide range of input voltages, making it versatile for various applications.

No. of Functions: 9

Offers multiple functions in a single device, saving space and cost.

Package Shape: SQUARE

Compact design that fits well in tight spaces on a PCB.

Power Supplies (V): 5,-4.5

Compatible with common power supply voltages, ensuring easy integration into existing systems.

No. of Terminals: 28

Sufficient number of terminals for connecting to other components in a circuit.

Package Style: CHIP CARRIER

Ensures reliable and secure mounting on the circuit board.

Minimum Supply Voltage: 4.5 V

Operates reliably even at low input voltages.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures without performance degradation.

Output Characteristics: 3-STATE

Provides flexibility in controlling the output signal.

Minimum Operating Temperature: 0 °C

Suitable for use in cold environments.

Terminal Finish: TIN

Corrosion-resistant finish for long-term reliability.

Terminal Position: QUAD

Facilitates easy connection to other components.

Maximum Seated Height: 4.57 mm

Low profile design for space-constrained applications.

Width: 11.505 mm

Compact size for easy integration.

Output Polarity: TRUE

Consistent output polarity for predictable behavior.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering processes.

Length: 11.505 mm

Compact size for space-saving installation.

Technology: ECL100K

Utilizes advanced technology for high performance.

Terminal Form: J BEND

Facilitates easy and secure connection to the circuit board.

Nominal Supply Voltage: 5 V

Compatible with standard 5V power supplies.

Maximum Delay: 9.6 ns

Fast response time for efficient signal translation.

Terminal Pitch: 1.27 mm

Standard terminal pitch for easy connection.

Interface IC Type: ECL TO TTL TRANSLATOR

Specifically designed for translating signals between ECL and TTL logic levels.

Technical Specifications

Voltage Level Translators MC100H601FNR2G attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

9.6 ns

Interface IC Type:

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

No. of Bits:

1

No. of Functions:

9

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

3-STATE

Output Latch/Register:

NONE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,-4.5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL100K

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Trade Compliance

MC100H601FNR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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