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MC100E241FN

Onsemi

MC100E241FN by Onsemi

MC100E241FN by Onsemi is an 8-bit digital shift register with a propagation delay of 0.975 ns. Operating at a max frequency of 700 MHz, it has a supply voltage range from 4.2V to 5.7V and is ideal for military-grade applications requiring high-speed data shifting in electronic systems.

Median Price

$3.858

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 851 parts In-Stock

1+ parts

-

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$3.430

1k+ parts

$3.070

10k+ parts

$2.890

851

-

$3.430

$3.070

$2.890

Verical

USA . 851 parts In-Stock

1+ parts

-

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$4.287

1k+ parts

$4.063

10k+ parts

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851

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$4.287

$4.063

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Digiode

USA . 2,356 parts In-Stock

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$3.629

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$3.629

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Vyrian

USA . 8,410 parts In-Stock

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Q Components

USA . 4,612 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 419 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 216 parts In-Stock

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R&J Components

USA . 118 parts In-Stock

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Elcom Components

USA . 26 parts In-Stock

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Prism Electronics

USA . 15 parts In-Stock

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Corphita

USA . 2,072 parts In-Stock

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$3.438

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$3.438

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Corohmni

South Africa . 57 parts In-Stock

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$3.590

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57

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Kulean Microsystems

USA . 7,881 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,393 parts In-Stock

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Problanco Electronics

Mexico . 5,136 parts In-Stock

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Kepictronics

USA . 1,887 parts In-Stock

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Metaverse IC Inc.

Canada . 1,887 parts In-Stock

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TANS Electronics

Latvia . 1,580 parts In-Stock

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SupplyDigital Components

Austria . 1,259 parts In-Stock

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UHIMA Technologies

Türkiye . 891 parts In-Stock

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Continental Prestige Electronics

USA . 851 parts In-Stock

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$3.220

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Microchip USA

USA . 211 parts In-Stock

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Assy Fe

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Perfect Parts

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Overview

Unlock the power of high-quality digital shift registers with the MC100E241FN from Onsemi. Designed for precision performance and reliability, this product delivers seamless integration and exceptional functionality in a variety of applications. With Onsemi's reputation for excellence in semiconductor manufacturing, customers can trust in the value and benefits that the MC100E241FN provides. Experience fast propagation delays, true output polarity, and a wide temperature range, making it ideal for demanding military-grade environments. Upgrade your electronics with the MC100E241FN and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the shift register, ensuring a longer lifespan.

No. of Bits: 8

Having 8 bits allows for a wide range of data storage and manipulation capabilities, making this shift register suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V allows for compatibility with many standard electronic systems and power sources.

Propagation Delay (tpd): 0.975 ns

The very low propagation delay ensures that data is processed quickly and efficiently, making this shift register ideal for high-speed applications.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this shift register is suitable for use in a wide range of environments and temperature conditions.

Maximum Frequency At Nominal Supply: 700000000 Hz

The high maximum frequency capability of 700 MHz allows for fast data processing and complex operations, making this shift register a high-performance choice.

Technical Specifications

Digital Shift Registers MC100E241FN attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V; SIPO OPERATION ALSO AVAILABLE

Count Direction:

RIGHT

Family:

100E

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e0

Length:

11.505 mm

Logic IC Type:

Maximum Frequency At Nominal Supply:

700000000 Hz

Moisture Sensitivity Level (MSL):

1

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-EMITTER

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

235

Power Supplies (V):

-4.5

Propagation Delay (tpd):

.975 ns

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Shift Registers

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trigger Type:

POSITIVE EDGE

Width:

11.505 mm

Minimum fmax:

700 MHz

Trade Compliance

MC100E241FN Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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