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MC100E141FNR2G

Onsemi

MC100E141FNR2G by Onsemi

MC100E141FNR2G by Onsemi is an 8-bit digital shift register with a supply voltage of 5V and operating temperature range of 0-85 °C. It features a propagation delay of 0.975ns, max frequency of 700MHz, and ECL technology. Ideal for applications requiring high-speed data transfer in electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,739 parts In-Stock

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Digiode

USA . 998 parts In-Stock

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Microchip USA

USA . 4,588 parts In-Stock

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SupplyDigital Components

Austria . 4,108 parts In-Stock

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Kulean Microsystems

USA . 3,445 parts In-Stock

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TANS Electronics

Latvia . 1,916 parts In-Stock

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Problanco Electronics

Mexico . 1,746 parts In-Stock

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Corphita

USA . 1,095 parts In-Stock

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Corohmni

South Africa . 354 parts In-Stock

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UHIMA Technologies

Türkiye . 183 parts In-Stock

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Overview

Experience unparalleled performance and reliability with the MC100E141FNR2G by Onsemi, a leading manufacturer in the industry. This digital shift register offers seamless integration and exceptional versatility in various applications. From automotive to industrial automation, this product delivers unparalleled efficiency and precision. Trust Onsemi's commitment to quality and innovation, and elevate your projects to new heights with the MC100E141FNR2G. Unlock endless possibilities and achieve superior results with this cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials are durable and lightweight, making the product easy to handle and transport.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation onto circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with many common electronic devices.

Propagation Delay (tpd): 0.975 ns

Ultra-fast propagation delay ensures quick data transfer and response times.

Maximum Operating Temperature: 85 °C

Can operate in a wide range of temperatures, making it suitable for various environmental conditions.

Output Characteristics: OPEN-EMITTER

Open-emitter output allows for flexibility in connecting to other components or devices.

Maximum Frequency At Nominal Supply: 700000000 Hz

High maximum frequency capability allows for fast data processing and operation.

Technology: ECL

ECL technology offers high-speed performance and low power consumption, ideal for demanding applications.

Minimum fmax: 700 MHz

High minimum frequency capability ensures reliable and efficient operation.

Maximum Supply Voltage (Vsup): 5.7 V

With a maximum supply voltage of 5.7V, the product has a built-in safety margin for overvoltage protection.

Technical Specifications

Digital Shift Registers MC100E141FNR2G attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -4.2V TO -5.7V; SIPO OPERATION ALSO AVAILABLE

Count Direction:

BIDIRECTIONAL

Family:

100E

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Logic IC Type:

Maximum Frequency At Nominal Supply:

700000000 Hz

No. of Bits:

8

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

-4.5

Propagation Delay (tpd):

.975 ns

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Shift Registers

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trigger Type:

POSITIVE EDGE

Width:

11.505 mm

Minimum fmax:

700 MHz

Trade Compliance

MC100E141FNR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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