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MC100E445FNR2G

Onsemi

MC100E445FNR2G by Onsemi

MC100E445FNR2G by Onsemi is a 4-bit digital shift register with 2.1ns propagation delay and ECL technology. It operates b/w 0-85 °C, has a supply voltage range of 4.2-5.7V, and is ideal for applications requiring fast data shifting in electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,652 parts In-Stock

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Digiode

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Component Stockers USA

USA . 236 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 5,649 parts In-Stock

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SupplyDigital Components

Austria . 4,100 parts In-Stock

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TANS Electronics

Latvia . 3,275 parts In-Stock

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Kulean Microsystems

USA . 3,024 parts In-Stock

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UHIMA Technologies

Türkiye . 687 parts In-Stock

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Corphita

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Corohmni

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Microchip USA

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Overview

Upgrade your digital shift register game with the MC100E445FNR2G by Onsemi. Designed with precision and quality in mind, Onsemi is a trusted manufacturer known for creating cutting-edge solutions. This versatile chip carrier package offers 4 bits of high-speed data manipulation with a nominal supply voltage of 5V, making it perfect for a wide range of applications. From industrial control systems to telecommunications equipment, this true output polarity device delivers fast propagation delays and reliable performance. Get ahead of the competition and experience the benefits of superior technology with the MC100E445FNR2G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the shift register durable and resistant to external factors, ensuring a long lifespan.

No. of Bits: 4

Having 4 bits allows for a decent amount of data storage and manipulation, making it suitable for a variety of applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes it compatible with many standard power sources and electronics.

Propagation Delay (tpd): 2.1 ns

With a low propagation delay, data can be processed quickly and efficiently, improving overall system performance.

Output Characteristics: OPEN-EMITTER

The open-emitter output characteristics allow for flexibility in connecting external components, enabling customization for specific requirements.

Minimum Operating Temperature: 0 °C

Being able to operate at low temperatures makes this shift register suitable for use in a wide range of environments.

Technology: ECL

Using ECL technology ensures high-speed operation and low power consumption, making it an efficient choice for demanding applications.

Minimum fmax: 2000 MHz

Having a minimum operating frequency of 2000 MHz allows for high-speed data processing, making this shift register ideal for applications requiring quick response times.

Technical Specifications

Digital Shift Registers MC100E445FNR2G attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Additional Features:

NECL MODE: VCC = 0V WITH VEE = -4.2 TO -5.7V

Count Direction:

RIGHT

Family:

100E

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Logic IC Type:

No. of Bits:

4

No. of Functions:

1

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

2.1 ns

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.7 V

Minimum Supply Voltage (Vsup):

4.2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trigger Type:

POSITIVE EDGE

Width:

11.505 mm

Minimum fmax:

2000 MHz

Trade Compliance

MC100E445FNR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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