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MC10H141L

Onsemi

MC10H141L by Onsemi

PARALLEL IN PARALLEL OUT; Temperature Grade: COMMERCIAL EXTENDED; Terminal Form: THROUGH-HOLE; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR;

Median Price

$4.401

Lifecycle Status

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Bristol Electronics

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Ack Elektronik San.Tic.Ltd.Sti

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Manoshevitz Elec. Sales

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Mil-Aero Solutions, Inc.

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Corohmni

South Africa . 204 parts In-Stock

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Ampacity Inc.

Singapore . 819 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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Speed Components Ltd (Excess)

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Technical Specifications

Digital Shift Registers MC10H141L attributes and parameters. Explore more Digital Shift Registers devices from Onsemi

Specs

Count Direction:

BIDIRECTIONAL

Family:

10H

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.49 mm

Logic IC Type:

Maximum Frequency At Nominal Supply:

250000000 Hz

No. of Bits:

4

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Propagation Delay (tpd):

2 ns

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Shift Registers

Surface Mount:

NO

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trigger Type:

POSITIVE EDGE

Width:

7.62 mm

Minimum fmax:

250 MHz

Trade Compliance

MC10H141L Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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