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FQD2N60CTM

Onsemi

FQD2N60CTM by Onsemi

FQD2N60CTM by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 7.6A Pulsed Drain Current, 120mJ Avalanche Energy Rating, and 4.7 ohm Drain-Source On Resistance. Suitable for ENHANCEMENT MODE operation in various electronic devices.

Median Price

$0.354

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,500 parts In-Stock

1+ parts

$1.400

100+ parts

$0.582

1k+ parts

$0.412

10k+ parts

$0.317

2,500

$1.400

$0.582

$0.412

$0.317

Mouser Electronics

USA . 2,459 parts In-Stock

1+ parts

$1.400

100+ parts

$0.582

1k+ parts

$0.454

10k+ parts

-

2,459

$1.400

$0.582

$0.454

-

Chip1Stop

Japan . 190,000 parts In-Stock

1+ parts

-

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-

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$0.311

190,000

-

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$0.311

Arrow

USA . 137,500 parts In-Stock

1+ parts

-

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$0.253

137,500

-

-

-

$0.253

Verical

USA . 15,000 parts In-Stock

1+ parts

-

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-

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$0.286

15,000

-

-

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$0.286

Rochester

USA . 203 parts In-Stock

1+ parts

-

100+ parts

$0.396

1k+ parts

$0.329

10k+ parts

$0.293

203

-

$0.396

$0.329

$0.293

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,546 parts In-Stock

1+ parts

$0.308

100+ parts

-

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2,546

$0.308

-

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.417

100+ parts

-

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200

$0.417

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Freelance Electronics

USA . 8 parts In-Stock

1+ parts

$0.587

100+ parts

-

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8

$0.587

-

-

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Maritex

Poland . 5,000 parts In-Stock

1+ parts

$0.826

100+ parts

$0.482

1k+ parts

$0.449

10k+ parts

$0.399

5,000

$0.826

$0.482

$0.449

$0.399

Chip Stock

USA . 244,824 parts In-Stock

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Vyrian

USA . 82,912 parts In-Stock

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NAC Semi

USA . 22,500 parts In-Stock

1+ parts

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$0.475

22,500

-

-

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$0.475

IBS Electronics

USA . 7,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.428

7,500

-

-

-

$0.428

Bristol Electronics

USA . 2,500 parts In-Stock

1+ parts

-

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2,500

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Sensible Micro Corp

USA . 2,500 parts In-Stock

1+ parts

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2,500

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Elcom Components

USA . 2,485 parts In-Stock

1+ parts

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2,485

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Cyclops Electronics Ltd

UK . 2,154 parts In-Stock

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2,154

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ComSIT Distribution GmbH

Germany . 210 parts In-Stock

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210

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ComSIT USA

USA . 210 parts In-Stock

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210

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 92,583 parts In-Stock

1+ parts

$0.235

100+ parts

$0.229

1k+ parts

$0.228

10k+ parts

-

92,583

$0.235

$0.229

$0.228

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Ampacity Inc.

Singapore . 83,182 parts In-Stock

1+ parts

$0.264

100+ parts

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83,182

$0.264

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Component Stockers USA

USA . 29 parts In-Stock

1+ parts

$0.280

100+ parts

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29

$0.280

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Corphita

USA . 2,021 parts In-Stock

1+ parts

$0.292

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2,021

$0.292

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Corohmni

South Africa . 348 parts In-Stock

1+ parts

$0.311

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348

$0.311

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Continental Prestige Electronics

USA . 4,321 parts In-Stock

1+ parts

$0.417

100+ parts

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10k+ parts

$0.409

4,321

$0.417

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-

$0.409

Argo Parts USA

USA . 2,076 parts In-Stock

1+ parts

$0.417

100+ parts

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10k+ parts

$0.405

2,076

$0.417

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$0.405

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.417

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50

$0.417

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Aztec Data Supply Inc.

USA . 1,288 parts In-Stock

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$1.549

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1,288

$1.549

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Perfect Parts

USA . 534,813 parts In-Stock

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534,813

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RC Electronics

USA . 74,700 parts In-Stock

1+ parts

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$0.380

1k+ parts

$0.340

10k+ parts

$0.330

74,700

-

$0.380

$0.340

$0.330

Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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GreenTree Electronics

Israel . 8,080 parts In-Stock

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TANS Electronics

Latvia . 3,434 parts In-Stock

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3,434

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S.R.D Solutions

India . 3,000 parts In-Stock

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Kepictronics

USA . 2,500 parts In-Stock

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Problanco Electronics

Mexico . 2,208 parts In-Stock

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2,208

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SupplyDigital Components

Austria . 1,354 parts In-Stock

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1,354

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Lixinc

USA . 907 parts In-Stock

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907

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UHIMA Technologies

Türkiye . 885 parts In-Stock

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885

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Kulean Microsystems

USA . 511 parts In-Stock

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511

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Supply Digital

USA . 458 parts In-Stock

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458

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Overview

Unleash the power of innovation with the FQD2N60CTM by Onsemi. Crafted with precision and expertise, this N-CHANNEL Power Field Effect Transistor (FET) offers unparalleled performance in switching applications. With a high minimum DS breakdown voltage of 600V, this transistor is designed to handle heavy-duty tasks with ease. Its single configuration with a built-in diode ensures seamless operation, while its small outline package shape makes it easy to integrate into any project. Experience reliability and efficiency like never before with the FQD2N60CTM - the ultimate solution for your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and control, enhancing the performance of the transistor.

Minimum DS Breakdown Voltage: 600 V

Can handle high voltages, making it suitable for various industrial and power applications.

Maximum Power Dissipation (Abs): 44 W

Can dissipate heat effectively, preventing overheating and ensuring stable operation.

Maximum Operating Temperature: 150 °C

Withstands high temperatures, making it suitable for demanding operating conditions.

Technical Specifications

Power Field Effect Transistors (FET) FQD2N60CTM attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

120 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

1.9 A

Maximum Drain Current (ID):

1.9 A

Maximum Drain-Source On Resistance:

4.7 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

7.6 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQD2N60CTM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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