Loading...

FQD2N90

Fairchild Semiconductor

FQD2N90 by Fairchild Semiconductor

FQD2N90 by Fairchild Semiconductor is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features 6.8A Max Pulsed Drain Current and 170mJ Avalanche Energy Rating, operating in ENHANCEMENT MODE. The transistor has a compact RECTANGULAR package with GULL WING terminals, suitable for surface mount installations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 205 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

205

-

-

-

-

Nova Conductors

Japan . 77 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

77

-

-

-

-

Vyrian

USA . 27 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 1,200 parts In-Stock

1+ parts

$11.295

100+ parts

-

1k+ parts

$10.843

10k+ parts

$10.843

1,200

$11.295

-

$10.843

$10.843

Ampacity Inc.

Singapore . 1,439 parts In-Stock

1+ parts

$55.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,439

$55.050

-

-

-

Kepictronics

USA . 27,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,860

-

-

-

-

A-Z Elektronik GmbH

Germany . 12,239 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,239

-

-

-

-

Alle Elektronik GmbH

Germany . 3,159 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,159

-

-

-

-

Continental Prestige Electronics

USA . 3,142 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,142

-

-

-

-

Argo Parts USA

USA . 2,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,006

-

-

-

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Supply Digital

USA . 1,510 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,510

-

-

-

-

Corphita

USA . 957 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

957

-

-

-

-

Overview

Experience the power of efficiency with the FQD2N90 by Fairchild Semiconductor. Crafted with precision and quality, this N-CHANNEL Power Field Effect Transistor (FET) offers unmatched reliability in SWITCHING applications. With a maximum DS Breakdown Voltage of 900V and an Avalanche Energy Rating of 170mJ, this transistor ensures optimal performance and durability. Take your projects to new heights with the FQD2N90 - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have lower ON resistance and higher current capabilities compared to P-Channel transistors, making it a suitable choice for high power applications.

Minimum DS Breakdown Voltage: 900 V

The high breakdown voltage allows this FET to withstand high voltage applications, making it suitable for power switching in challenging environments.

Maximum Pulsed Drain Current (IDM): 6.8 A

With a high pulsed drain current rating, this FET can handle short bursts of high current, making it ideal for applications with rapid switching requirements.

Maximum Power Dissipation (Abs): 50 W

The high power dissipation rating indicates that this FET can handle significant power without overheating, ensuring reliable performance in demanding conditions.

Maximum Operating Temperature: 150 °C

With a high operating temperature rating, this FET can operate efficiently in elevated temperature environments, increasing its versatility for various applications.

Technical Specifications

Power Field Effect Transistors (FET) FQD2N90 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

170 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

900 V

Maximum Drain Current (Abs) (ID):

1.7 A

Maximum Drain Current (ID):

1.7 A

Maximum Drain-Source On Resistance:

7.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

6.8 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQD2N90 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20