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FGB20N60SFD

Onsemi

FGB20N60SFD by Onsemi

FGB20N60SFD by Onsemi is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 208W Pd. It has a tf of 48ns and toff of 123ns, suitable for power control applications requiring fast switching speeds in surface mount designs.

Median Price

$2.214

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 95 parts In-Stock

1+ parts

$1.899

100+ parts

$1.728

1k+ parts

$1.557

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95

$1.899

$1.728

$1.557

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DigiKey

USA . 3,200 parts In-Stock

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$2.530

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3,200

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$2.530

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Flip Electronics (Authorized)

USA . 3,200 parts In-Stock

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3,200

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Digiode

USA . 2,340 parts In-Stock

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$1.804

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2,340

$1.804

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Vyrian

USA . 1,014 parts In-Stock

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$1.899

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1,014

$1.899

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Maritex

Poland . 200 parts In-Stock

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$2.049

100+ parts

$1.487

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200

$2.049

$1.487

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DigiKey Marketplace

USA . 3,200 parts In-Stock

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3,200

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Flip Electronics

USA . 1,600 parts In-Stock

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1,600

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ACDS - Activité Composants Distribution Service

France . 485 parts In-Stock

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485

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Bristol Electronics

USA . 485 parts In-Stock

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485

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Dan-Mar Components

USA . 485 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,081 parts In-Stock

1+ parts

$1.709

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$1.709

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Corohmni

South Africa . 310 parts In-Stock

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$1.899

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310

$1.899

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Advanced Electronics

New Zealand . 95 parts In-Stock

1+ parts

$1.899

100+ parts

$1.728

1k+ parts

$1.557

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95

$1.899

$1.728

$1.557

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Native Components

USA . 230 parts In-Stock

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$12.596

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230

$12.596

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Northwest PG Solutions

USA . 1,192 parts In-Stock

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$13.856

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$12.470

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$13.856

$12.470

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RC Electronics

USA . 46,169 parts In-Stock

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$2.170

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$1.980

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$1.920

46,169

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$2.170

$1.980

$1.920

Problanco Electronics

Mexico . 5,879 parts In-Stock

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Perfect Parts

USA . 3,326 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,541 parts In-Stock

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SupplyDigital Components

Austria . 1,267 parts In-Stock

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UHIMA Technologies

Türkiye . 976 parts In-Stock

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Supply Digital

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Kulean Microsystems

USA . 232 parts In-Stock

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232

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Overview

Enhance your power control applications with the FGB20N60SFD Insulated Gate Bipolar Transistor from Onsemi. Trust in the quality and reliability of a leading manufacturer to deliver top-notch performance. This N-CHANNEL transistor with a built-in diode offers customers the value of maximum power dissipation, fast fall and turn-off times, and high operating temperatures. Take advantage of its surface mount capability, small outline package style, and ease of installation for your next project. Elevate your power control solutions with the FGB20N60SFD today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control capabilities and allows for high performance in power switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the design and implementation process by integrating a diode, reducing external component requirements.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in controlling high power levels.

Maximum Power Dissipation (Abs): 208 W

Can handle high power dissipation levels, making it suitable for demanding applications that require power handling capabilities.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without performance degradation, ensuring reliability in harsh environments.

Maximum Collector-Emitter Voltage: 600 V

With a high collector-emitter voltage rating, this product is suitable for applications that require high voltage operation.

Maximum Collector Current (IC): 40 A

Capable of handling high collector currents, making it suitable for applications that require high power output.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGB20N60SFD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

48 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

123 ns

Nominal Turn On Time (ton):

28 ns

Trade Compliance

FGB20N60SFD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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