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FGB20N6S2

Fairchild Semiconductor

FGB20N6S2 by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 28 A; Moisture Sensitivity Level (MSL): 1;

Median Price

$0.766

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6

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1k+

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Farnell

UK . 9,054 parts In-Stock

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$0.572

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Rochester

USA . 8,654 parts In-Stock

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$0.766

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$0.636

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$0.567

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$0.567

Verical

USA . 3,666 parts In-Stock

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$0.958

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3,666

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$0.958

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Vyrian

USA . 899 parts In-Stock

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899

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Digiode

USA . 477 parts In-Stock

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$0.597

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DigiKey Marketplace

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Corphita

USA . 26 parts In-Stock

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26

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Component Stockers USA

USA . 11,684 parts In-Stock

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$0.640

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$0.600

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$0.540

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11,684

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Microchip USA

USA . 239 parts In-Stock

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$3.900

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239

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGB20N6S2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fairchild Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

105 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

205 ns

Nominal Turn On Time (ton):

11.5 ns

Trade Compliance

FGB20N6S2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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