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FFSB1265A

Onsemi

FFSB1265A by Onsemi

The Onsemi FFSB1265A is a Schottky rectifier diode with a max reverse voltage of 650V and forward current of 14A. It operates b/w -55 to 175°C, with a power dissipation of 100W. Ideal for high-efficiency applications, it features a single terminal position in a small outline package.

Median Price

$2.720

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 438 parts In-Stock

1+ parts

$15.100

100+ parts

$6.780

1k+ parts

-

10k+ parts

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438

$15.100

$6.780

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Flip Electronics (Authorized)

USA . 5,000 parts In-Stock

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5,000

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Rochester

USA . 3,359 parts In-Stock

1+ parts

-

100+ parts

$2.290

1k+ parts

$2.050

10k+ parts

$1.930

3,359

-

$2.290

$2.050

$1.930

Mouser Electronics

USA . 714 parts In-Stock

1+ parts

-

100+ parts

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$2.490

10k+ parts

$2.220

714

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-

$2.490

$2.220

DigiKey

USA . 666 parts In-Stock

1+ parts

-

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$2.950

10k+ parts

$2.378

666

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$2.950

$2.378

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,101 parts In-Stock

1+ parts

$2.490

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-

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2,101

$2.490

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Digiode

USA . 2,158 parts In-Stock

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$4.646

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2,158

$4.646

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Chip Stock

USA . 15,000 parts In-Stock

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15,000

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Flip Electronics

USA . 5,000 parts In-Stock

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5,000

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Distributors (Availability)

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Corohmni

South Africa . 386 parts In-Stock

1+ parts

$2.490

100+ parts

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386

$2.490

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Northwest PG Solutions

USA . 1,122 parts In-Stock

1+ parts

$3.017

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1,122

$3.017

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Corphita

USA . 1,495 parts In-Stock

1+ parts

$4.401

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1,495

$4.401

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Microchip USA

USA . 9,974 parts In-Stock

1+ parts

$15.990

100+ parts

$15.890

1k+ parts

$15.840

10k+ parts

$15.790

9,974

$15.990

$15.890

$15.840

$15.790

TANS Electronics

Latvia . 6,431 parts In-Stock

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Perfect Parts

USA . 6,044 parts In-Stock

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Kulean Microsystems

USA . 5,604 parts In-Stock

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5,604

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Problanco Electronics

Mexico . 3,183 parts In-Stock

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SupplyDigital Components

Austria . 2,468 parts In-Stock

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2,468

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GreenTree Electronics

Israel . 588 parts In-Stock

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588

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Authorized Procurement Solutions

USA . 572 parts In-Stock

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572

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Native Components

USA . 546 parts In-Stock

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$2.661

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546

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$2.661

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UHIMA Technologies

Türkiye . 94 parts In-Stock

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94

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Overview

Unlock the power of efficiency with the Onsemi FFSB1265A diode rectifier. Manufactured by a trusted industry leader, this high-quality product is designed for maximum performance and reliability. Ideal for a wide range of applications, this Schottky technology diode offers a peak repetitive reverse voltage of 650V and a maximum output current of 14A. With a matte tin finish and gull-wing terminal form, this rectifier diode provides superior value and benefits to customers looking for a top-of-the-line solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and durability for the diode, ensuring longer lifespan and reliability.

Maximum Reverse Current: 200 uA

Low reverse current minimizes power loss and improves efficiency of the diode.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Technology: SCHOTTKY

Schottky diodes have low forward voltage drop and fast switching speeds, making them ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 650 V

High voltage rating allows this diode to be used in various high-power applications.

Technical Specifications

Diodes & Rectifiers FFSB1265A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

940 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

14 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

100 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

FFSB1265A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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