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FFSB2065BDN-F085

Onsemi

FFSB2065BDN-F085 by Onsemi

FFSB2065BDN-F085 by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max reverse voltage of 650V. It operates b/w -55 to 175°C, has a max output current of 11.8A, and is ideal for efficiency applications in automotive electronics.

Median Price

$3.925

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,156 parts In-Stock

1+ parts

$8.010

100+ parts

$4.000

1k+ parts

$3.630

10k+ parts

-

1,156

$8.010

$4.000

$3.630

-

Chip1Stop

Japan . 525 parts In-Stock

1+ parts

$19.600

100+ parts

$8.670

1k+ parts

$6.560

10k+ parts

-

525

$19.600

$8.670

$6.560

-

Rochester

USA . 3,055 parts In-Stock

1+ parts

-

100+ parts

$3.140

1k+ parts

$2.810

10k+ parts

$2.640

3,055

-

$3.140

$2.810

$2.640

Verical

USA . 2,300 parts In-Stock

1+ parts

-

100+ parts

$3.925

1k+ parts

$3.513

10k+ parts

$3.300

2,300

-

$3.925

$3.513

$3.300

DigiKey

USA . 742 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.228

10k+ parts

$3.134

742

-

-

$3.228

$3.134

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,295 parts In-Stock

1+ parts

$4.024

100+ parts

-

1k+ parts

-

10k+ parts

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2,295

$4.024

-

-

-

Digiode

USA . 1,760 parts In-Stock

1+ parts

$5.719

100+ parts

-

1k+ parts

-

10k+ parts

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1,760

$5.719

-

-

-

Chip Stock

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

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80,000

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-

-

Flip Electronics

USA . 2,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,400

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 51 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

$0.039

51

$0.041

-

-

$0.039

Corohmni

South Africa . 92 parts In-Stock

1+ parts

$4.024

100+ parts

-

1k+ parts

-

10k+ parts

-

92

$4.024

-

-

-

Corphita

USA . 1,378 parts In-Stock

1+ parts

$5.418

100+ parts

-

1k+ parts

-

10k+ parts

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1,378

$5.418

-

-

-

Microchip USA

USA . 9,548 parts In-Stock

1+ parts

$18.560

100+ parts

$18.300

1k+ parts

$18.170

10k+ parts

$18.030

9,548

$18.560

$18.300

$18.170

$18.030

SupplyDigital Components

Austria . 6,840 parts In-Stock

1+ parts

-

100+ parts

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6,840

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Kulean Microsystems

USA . 6,052 parts In-Stock

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6,052

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-

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Problanco Electronics

Mexico . 5,769 parts In-Stock

1+ parts

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5,769

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Perfect Parts

USA . 3,282 parts In-Stock

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3,282

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TANS Electronics

Latvia . 2,247 parts In-Stock

1+ parts

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2,247

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-

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GreenTree Electronics

Israel . 745 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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745

-

-

-

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Authorized Procurement Solutions

USA . 665 parts In-Stock

1+ parts

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665

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Northwest PG Solutions

USA . 573 parts In-Stock

1+ parts

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100+ parts

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573

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UHIMA Technologies

Türkiye . 555 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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555

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-

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Overview

Experience unparalleled efficiency and reliability with the FFSB2065BDN-F085 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers superior quality diodes and rectifiers for a wide range of applications. The FFSB2065BDN-F085 boasts a common cathode configuration and two elements, making it ideal for maximizing power dissipation up to 75W. With a maximum reverse voltage of 650V and a peak forward current of 45A, this Schottky diode offers exceptional performance in various temperature ranges. Trust Onsemi to provide cutting-edge technology and innovative solutions for your efficiency needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for efficient current flow and connectivity in electronic circuits.

Maximum Reverse Current: 40 uA

Low reverse current ensures minimal power loss and efficient operation.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for industrial applications.

Terminal Finish: MATTE TIN

Provides good electrical conductivity and solderability for easy installation.

Diode Type: RECTIFIER DIODE

Ideal for converting AC to DC, making it versatile for various power supply applications.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds compared to regular diodes, improving efficiency.

Maximum Output Current: 11.8 A

High output current capacity allows for handling of heavy loads in circuits.

Maximum Repetitive Peak Reverse Voltage: 650 V

Can handle high reverse voltages, making it suitable for high voltage applications.

Diode Element Material: SILICON CARBIDE

Silicon carbide diodes offer high thermal conductivity and efficiency compared to traditional silicon diodes.

Technical Specifications

Diodes & Rectifiers FFSB2065BDN-F085 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

45 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

11.8 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

75 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

FFSB2065BDN-F085 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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