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FFSB0665A

Onsemi

FFSB0665A by Onsemi

The Onsemi FFSB0665A is a Schottky rectifier diode with 650V reverse test voltage, 9A output current, and 65W power dissipation. It is designed for high efficiency applications, operates b/w -55 to 175°C, and features a surface-mount Gull Wing package style.

Median Price

$3.410

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 703 parts In-Stock

1+ parts

$3.410

100+ parts

$1.534

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703

$3.410

$1.534

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Mouser Electronics

USA . 688 parts In-Stock

1+ parts

$3.410

100+ parts

$1.410

1k+ parts

$1.130

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688

$3.410

$1.410

$1.130

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Flip Electronics (Authorized)

USA . 15,868 parts In-Stock

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15,868

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Distributors (In-Stock)

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Digiode

USA . 374 parts In-Stock

1+ parts

$2.860

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374

$2.860

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Vyrian

USA . 236 parts In-Stock

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$3.010

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236

$3.010

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Chip Stock

USA . 35,000 parts In-Stock

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35,000

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Flip Electronics

USA . 3,868 parts In-Stock

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3,868

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Distributors (Availability)

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Corphita

USA . 1,988 parts In-Stock

1+ parts

$2.709

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1,988

$2.709

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Corohmni

South Africa . 189 parts In-Stock

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$3.010

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189

$3.010

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Northwest PG Solutions

USA . 553 parts In-Stock

1+ parts

$3.047

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553

$3.047

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Microchip USA

USA . 3,703 parts In-Stock

1+ parts

$10.985

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3,703

$10.985

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Problanco Electronics

Mexico . 7,328 parts In-Stock

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TANS Electronics

Latvia . 5,694 parts In-Stock

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Perfect Parts

USA . 5,331 parts In-Stock

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Kulean Microsystems

USA . 5,163 parts In-Stock

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SupplyDigital Components

Austria . 1,047 parts In-Stock

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1,047

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Native Components

USA . 781 parts In-Stock

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$2.687

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781

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$2.687

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Authorized Procurement Solutions

USA . 505 parts In-Stock

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505

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UHIMA Technologies

Türkiye . 318 parts In-Stock

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318

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Overview

Looking for a high-quality diode that offers exceptional efficiency? Look no further than the FFSB0665A by Onsemi. With its cutting-edge Schottky technology and maximum reverse voltage of 650V, this rectifier diode is perfect for a wide range of applications. From power supplies to industrial equipment, this diode ensures optimal performance and reliability. Trust Onsemi's reputation for innovation and excellence to deliver the value and benefits you need for your electronic projects. Experience the advantages of the FFSB0665A today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the diode durable and resistant to external elements, ensuring a longer lifespan.

Maximum Reverse Current: 200 uA

Low reverse current ensures minimal power loss and improved efficiency in electronic circuits.

Reverse Test Voltage: 650 V

High reverse test voltage allows the diode to withstand high voltages, making it suitable for a variety of applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance even in demanding environments.

Diode Type: RECTIFIER DIODE

Rectifier diodes are specifically designed for converting AC to DC, making this diode ideal for power supply applications.

Technology: SCHOTTKY

Schottky technology offers faster switching speeds and lower forward voltage drop, resulting in improved efficiency and reduced heat generation.

Technical Specifications

Diodes & Rectifiers FFSB0665A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

42 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

9 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

65 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

FFSB0665A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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