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FFSB1065A

Onsemi

FFSB1065A by Onsemi

FFSB1065A by Onsemi is a Schottky rectifier diode with 650V reverse test voltage and 14A output current. It has a max power dissipation of 106W, making it suitable for high-efficiency applications. With a surface-mount package style and Gull Wing terminal form, it operates b/w -55 °C to 175°C efficiently.

Median Price

$3.838

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 780 parts In-Stock

1+ parts

$5.550

100+ parts

$2.633

1k+ parts

-

10k+ parts

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780

$5.550

$2.633

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-

Mouser Electronics

USA . 642 parts In-Stock

1+ parts

$5.550

100+ parts

$2.610

1k+ parts

$2.200

10k+ parts

-

642

$5.550

$2.610

$2.200

-

Chip1Stop

Japan . 422 parts In-Stock

1+ parts

$14.200

100+ parts

$5.840

1k+ parts

-

10k+ parts

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422

$14.200

$5.840

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Newark

USA . 4,800 parts In-Stock

1+ parts

-

100+ parts

-

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$2.020

10k+ parts

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4,800

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-

$2.020

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Rochester

USA . 3,071 parts In-Stock

1+ parts

-

100+ parts

$1.900

1k+ parts

$1.700

10k+ parts

$1.600

3,071

-

$1.900

$1.700

$1.600

Verical

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

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$2.125

10k+ parts

$2.000

1,600

-

-

$2.125

$2.000

Flip Electronics (Authorized)

USA . 158 parts In-Stock

1+ parts

-

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158

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Distributors (In-Stock)

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Digiode

USA . 1,856 parts In-Stock

1+ parts

$2.004

100+ parts

-

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1,856

$2.004

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Vyrian

USA . 202 parts In-Stock

1+ parts

$2.110

100+ parts

-

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202

$2.110

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Chip Stock

USA . 48,000 parts In-Stock

1+ parts

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100+ parts

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48,000

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Flip Electronics

USA . 158 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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158

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Distributors (Availability)

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Corphita

USA . 243 parts In-Stock

1+ parts

$1.899

100+ parts

-

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243

$1.899

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Corohmni

South Africa . 301 parts In-Stock

1+ parts

$2.110

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301

$2.110

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Microchip USA

USA . 2,056 parts In-Stock

1+ parts

$19.530

100+ parts

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2,056

$19.530

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Kulean Microsystems

USA . 6,977 parts In-Stock

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6,977

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Perfect Parts

USA . 5,607 parts In-Stock

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5,607

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TANS Electronics

Latvia . 2,501 parts In-Stock

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2,501

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SupplyDigital Components

Austria . 2,410 parts In-Stock

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2,410

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Problanco Electronics

Mexico . 2,272 parts In-Stock

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2,272

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Northwest PG Solutions

USA . 1,881 parts In-Stock

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1,881

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UHIMA Technologies

Türkiye . 839 parts In-Stock

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839

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Native Components

USA . 697 parts In-Stock

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697

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GreenTree Electronics

Israel . 522 parts In-Stock

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522

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Overview

Discover the unparalleled quality and efficiency of the FFSB1065A by Onsemi, a leading manufacturer in the field of Diodes & Rectifiers. This cutting-edge product offers a range of applications, from power supplies to motor drives, with a maximum reverse voltage of 650V and a forward current of 14A. With its superior technology and maximum power dissipation of 106W, this rectifier diode ensures optimal performance and reliability. Experience the value and benefits of choosing Onsemi for your electronic needs - trust in innovation, trust in quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and insulation for the diode, ensuring durability and reliability.

Config: SINGLE

Simplifies circuit design and implementation, making it easier to integrate into various systems.

Surface Mount: YES

Allows for easy and efficient PCB mounting, saving space and simplifying assembly processes.

Maximum Reverse Current: 200 uA

Ensures low leakage current, enhancing the efficiency and performance of the diode.

Diode Type: RECTIFIER DIODE

Designed specifically for rectification applications, providing efficient and reliable conversion of AC to DC.

Technology: SCHOTTKY

Offers low forward voltage drop and fast switching speed, making it ideal for high-efficiency applications.

Maximum Forward Voltage (VF): 1.75 V

Features a low forward voltage drop, reducing power losses and improving efficiency.

Maximum Output Current: 14 A

Capable of handling high current loads, making it suitable for power electronics applications.

Maximum Repetitive Peak Reverse Voltage: 650 V

Provides high reverse voltage capability, ensuring reliable operation in various voltage applications.

Technical Specifications

Diodes & Rectifiers FFSB1065A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

56 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

14 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

106 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

FFSB1065A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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