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FFSB1065B-F085

Onsemi

FFSB1065B-F085 by Onsemi

FFSB1065B-F085 by Onsemi is a Schottky rectifier diode with a max output current of 27A and a max reverse test voltage of 650V. It is used in applications requiring high efficiency, such as power electronics.

Median Price

$3.300

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,183 parts In-Stock

1+ parts

$1.872

100+ parts

-

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2,183

$1.872

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Chip1Stop

Japan . 2,137 parts In-Stock

1+ parts

$2.790

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2,137

$2.790

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Farnell

UK . 404 parts In-Stock

1+ parts

$3.300

100+ parts

$1.620

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-

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404

$3.300

$1.620

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Mouser Electronics

USA . 1,374 parts In-Stock

1+ parts

$4.240

100+ parts

$2.140

1k+ parts

$1.820

10k+ parts

-

1,374

$4.240

$2.140

$1.820

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Element14

Singapore . 404 parts In-Stock

1+ parts

$4.250

100+ parts

$2.900

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-

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404

$4.250

$2.900

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Newark

USA . 404 parts In-Stock

1+ parts

$4.370

100+ parts

$2.140

1k+ parts

$1.880

10k+ parts

$1.640

404

$4.370

$2.140

$1.880

$1.640

DigiKey

USA . 1,345 parts In-Stock

1+ parts

$4.870

100+ parts

$2.275

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1,345

$4.870

$2.275

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Flip Electronics (Authorized)

USA . 8,000 parts In-Stock

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8,000

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Rochester

USA . 5,999 parts In-Stock

1+ parts

-

100+ parts

$1.600

1k+ parts

$1.430

10k+ parts

$1.340

5,999

-

$1.600

$1.430

$1.340

Verical

USA . 4,618 parts In-Stock

1+ parts

-

100+ parts

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$1.788

10k+ parts

$1.675

4,618

-

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$1.788

$1.675

EBV Elektronik

Germany . 1,600 parts In-Stock

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1,600

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Distributors (In-Stock)

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Digiode

USA . 946 parts In-Stock

1+ parts

$1.682

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946

$1.682

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Nova Conductors

Japan . 26 parts In-Stock

1+ parts

$5.200

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26

$5.200

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Chip Stock

USA . 48,000 parts In-Stock

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48,000

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Flip Electronics

USA . 9,600 parts In-Stock

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9,600

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DigiKey Marketplace

USA . 8,000 parts In-Stock

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8,000

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TME

Poland . 1,600 parts In-Stock

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$1.970

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1,600

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$1.970

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Vyrian

USA . 1,518 parts In-Stock

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1,518

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,178 parts In-Stock

1+ parts

$0.052

100+ parts

-

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4,178

$0.052

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Ampacity Inc.

Singapore . 1,969 parts In-Stock

1+ parts

$1.120

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1,969

$1.120

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Semicontronic

India . 1,723 parts In-Stock

1+ parts

$1.120

100+ parts

$1.092

1k+ parts

$1.086

10k+ parts

-

1,723

$1.120

$1.092

$1.086

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Corohmni

South Africa . 216 parts In-Stock

1+ parts

$1.530

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216

$1.530

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Corphita

USA . 2,225 parts In-Stock

1+ parts

$1.593

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2,225

$1.593

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$5.096

100+ parts

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1k+ parts

$4.892

10k+ parts

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500

$5.096

-

$4.892

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Modulus Dynamics

Lithuania . 870 parts In-Stock

1+ parts

$5.772

100+ parts

$5.714

1k+ parts

$5.541

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-

870

$5.772

$5.714

$5.541

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Microchip USA

USA . 3,950 parts In-Stock

1+ parts

$16.530

100+ parts

$16.290

1k+ parts

$16.180

10k+ parts

$16.060

3,950

$16.530

$16.290

$16.180

$16.060

SupplyDigital Components

Austria . 5,652 parts In-Stock

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5,652

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Perfect Parts

USA . 5,264 parts In-Stock

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5,264

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iodParts Technologies Inc.

India . 2,746 parts In-Stock

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2,746

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TANS Electronics

Latvia . 2,577 parts In-Stock

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2,577

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Kulean Microsystems

USA . 2,131 parts In-Stock

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2,131

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Argo Parts USA

USA . 1,472 parts In-Stock

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1,472

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Problanco Electronics

Mexico . 883 parts In-Stock

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883

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Eastek

USA . 800 parts In-Stock

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800

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Authorized Procurement Solutions

USA . 700 parts In-Stock

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700

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UHIMA Technologies

Türkiye . 423 parts In-Stock

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423

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Continental Prestige Electronics

USA . 419 parts In-Stock

1+ parts

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100+ parts

$2.150

1k+ parts

$1.660

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419

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$2.150

$1.660

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Overview

Discover the FFSB1065B-F085 by Onsemi, a top-quality rectifier diode that brings efficiency to new heights. Manufactured by Onsemi, a trusted leader in the industry, this diode offers unmatched performance and reliability. Its Schottky technology ensures low forward voltage and maximum output current of 27A, making it perfect for high-power applications. With a maximum reverse test voltage of 650V, it can handle even the toughest tasks with ease. Whether you need to improve power conversion in industrial equipment or enhance energy efficiency in renewable energy systems, the FFSB1065B-F085 is your go-to solution. Don't miss out on the value, benefits, and advantages this exceptional diode delivers.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection, making it suitable for various applications.

Config:

SINGLE - Single configuration ensures simplicity and ease of use.

Surface Mount:

YES - Surface mount allows for efficient and compact installation.

Maximum Reverse Current:

40 uA - Low reverse current provides efficient operation and helps prevent power loss.

Package Shape:

RECTANGULAR - Rectangular shape enables easy mounting and positioning.

Reverse Test Voltage:

650 V - High reverse test voltage ensures effective reverse blocking capability.

No. of Terminals:

2 - With only two terminals, connection is straightforward and uncomplicated.

Package Style (Meter):

SMALL OUTLINE - The small outline package style offers space-saving advantages.

Application:

EFFICIENCY - This diode is specifically designed for applications where efficiency is crucial.

Maximum Operating Temperature:

175 °C - High maximum operating temperature allows for reliable performance in demanding environments.

Minimum Operating Temperature:

55 °C - The diode can operate efficiently even in excessively cold temperatures.

Terminal Finish:

Matte Tin (Sn) - annealed - The annealed matte tin terminal finish provides excellent conductivity and reliability.

Terminal Position:

SINGLE - Single terminal position simplifies installation and usage.

Case Connection:

CATHODE - The cathode connection ensures correct polarity and prevents damage caused by reverse bias.

Maximum Power Dissipation:

79 W - High power dissipation capability enables the diode to handle large amounts of power.

Maximum Time At Peak Reflow Temperature (s):

30 - This diode can withstand peak reflow temperature for a considerable amount of time, ensuring reliable soldering.

Peak Reflow Temperature °C:

260 - The diode can withstand high peak reflow temperatures during assembly processes.

Reference Standard:

AEC-Q101 - The diode complies with the AEC-Q101 automotive qualification standard, ensuring reliability and suitability for automotive applications.

Diode Type:

RECTIFIER DIODE - This diode type efficiently converts AC to DC, making it ideal for rectification purposes.

Maximum Forward Voltage (VF):

1.7 V - Low forward voltage drop reduces power loss and increases efficiency.

Maximum Output Current:

27 A - High output current capability makes this diode suitable for demanding applications.

Technology:

SCHOTTKY - Schottky technology provides low forward voltage drop and fast switching characteristics.

Terminal Form:

GULL WING - The gull wing terminal form allows for easy soldering and reliable electrical connections.

No. of Elements:

1 - This diode consists of a single element, simplifying its usage and installation.

Maximum Repetitive Peak Reverse Voltage:

650 V - The diode can handle repetitive reverse voltage without breakdown, providing reliability in rectification.

Moisture Sensitivity Level (MSL):

1 - The diode is certified with MSL 1, indicating it has unlimited floor life and requires no specific handling precautions.

No. of Phases:

1 - This diode operates in a single-phase system, making it suitable for a wide range of applications.

Maximum Non Repetitive Peak Forward Current:

45 A - The diode can handle short-duration high forward current spikes, making it suitable for transient conditions.

Diode Element Material:

SILICON CARBIDE - Silicon carbide diode element material provides high durability, low forward voltage drop, and efficient operation.

Technical Specifications

Diodes & Rectifiers FFSB1065B-F085 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

45 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

27 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

79 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

FFSB1065B-F085 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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