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FFSB0865B

Onsemi

FFSB0865B by Onsemi

The Onsemi FFSB0865B is a Schottky rectifier diode with a max reverse voltage of 650V and forward voltage of 1.7V, ideal for efficiency applications. It has a max output current of 10.1A, operating temperature range from -55 to 175°C, and can dissipate up to 73W power in a small outline package suitable for surface mount technology.

Median Price

$2.533

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 765 parts In-Stock

1+ parts

$3.530

100+ parts

$1.597

1k+ parts

-

10k+ parts

-

765

$3.530

$1.597

-

-

Mouser Electronics

USA . 456 parts In-Stock

1+ parts

$3.530

100+ parts

$1.600

1k+ parts

$1.180

10k+ parts

-

456

$3.530

$1.600

$1.180

-

Rochester

USA . 6,395 parts In-Stock

1+ parts

-

100+ parts

$1.400

1k+ parts

$1.160

10k+ parts

$1.040

6,395

-

$1.400

$1.160

$1.040

Verical

USA . 5,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.037

10k+ parts

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5,600

-

-

$1.037

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Flip Electronics (Authorized)

USA . 1,600 parts In-Stock

1+ parts

-

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1,600

-

-

-

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RS (Exports)

UK . 1,575 parts In-Stock

1+ parts

-

100+ parts

$2.533

1k+ parts

-

10k+ parts

-

1,575

-

$2.533

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 421 parts In-Stock

1+ parts

$1.083

100+ parts

-

1k+ parts

-

10k+ parts

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421

$1.083

-

-

-

Vyrian

USA . 2,125 parts In-Stock

1+ parts

$1.140

100+ parts

-

1k+ parts

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2,125

$1.140

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-

-

Chip Stock

USA . 59,000 parts In-Stock

1+ parts

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59,000

-

-

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Flip Electronics

USA . 7,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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7,200

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,835 parts In-Stock

1+ parts

$1.026

100+ parts

-

1k+ parts

-

10k+ parts

-

1,835

$1.026

-

-

-

Corohmni

South Africa . 165 parts In-Stock

1+ parts

$1.140

100+ parts

-

1k+ parts

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10k+ parts

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165

$1.140

-

-

-

Native Components

USA . 751 parts In-Stock

1+ parts

$8.317

100+ parts

-

1k+ parts

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10k+ parts

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751

$8.317

-

-

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Northwest PG Solutions

USA . 1,973 parts In-Stock

1+ parts

$9.148

100+ parts

$8.233

1k+ parts

-

10k+ parts

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1,973

$9.148

$8.233

-

-

Microchip USA

USA . 5,209 parts In-Stock

1+ parts

$14.890

100+ parts

$14.800

1k+ parts

$14.750

10k+ parts

$14.710

5,209

$14.890

$14.800

$14.750

$14.710

QUARKTWIN TECHNOLOGY LTD

USA . 20,679 parts In-Stock

1+ parts

-

100+ parts

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20,679

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SupplyDigital Components

Austria . 1,416 parts In-Stock

1+ parts

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1,416

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Kulean Microsystems

USA . 1,334 parts In-Stock

1+ parts

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1,334

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-

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UHIMA Technologies

Türkiye . 937 parts In-Stock

1+ parts

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100+ parts

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937

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Problanco Electronics

Mexico . 552 parts In-Stock

1+ parts

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552

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TANS Electronics

Latvia . 230 parts In-Stock

1+ parts

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230

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Overview

Boost your efficiency with the FFSB0865B by Onsemi. This high-quality rectifier diode offers reliable performance and unmatched durability, thanks to its cutting-edge technology and superior design. Perfect for a wide range of applications, this diode is a game-changer in the world of electronics. Experience the benefits of increased power dissipation, reduced reverse current, and exceptional thermal management. Upgrade your projects with the FFSB0865B and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring longevity and reliability in various applications.

Maximum Reverse Current: 40 uA

Low reverse current helps in minimizing power loss and improving efficiency of the diode.

Reverse Test Voltage: 650 V

High reverse test voltage makes the diode suitable for applications requiring high voltage protection.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, this diode can perform well in harsh environments without overheating.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting AC to DC, making this product suitable for power supply applications.

Peak Reflow Temperature °C: 260

The diode can withstand high temperatures during soldering processes, ensuring proper assembly and reliability.

Technology: SCHOTTKY

Schottky diodes have lower forward voltage drop and faster switching speeds, making them ideal for high efficiency applications.

Technical Specifications

Diodes & Rectifiers FFSB0865B attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.7 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

56 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

10.1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

73 W

Maximum Repetitive Peak Reverse Voltage:

650 V

Maximum Reverse Current:

40 uA

Reverse Test Voltage:

650 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

FFSB0865B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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