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FFSB20120A

Onsemi

FFSB20120A by Onsemi

FFSB20120A by Onsemi is a Schottky rectifier diode with a max reverse voltage of 1200V and forward voltage of 1.75V. It has a max output current of 32A, making it suitable for high-efficiency applications. With a package style of small outline and matte tin terminal finish, it operates b/w -55 °C to 175°C efficiently.

Median Price

$9.850

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 330 parts In-Stock

1+ parts

$9.850

100+ parts

$4.990

1k+ parts

$4.680

10k+ parts

-

330

$9.850

$4.990

$4.680

-

DigiKey

USA . 238 parts In-Stock

1+ parts

$9.850

100+ parts

$4.987

1k+ parts

-

10k+ parts

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238

$9.850

$4.987

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-

Chip1Stop

Japan . 2,049 parts In-Stock

1+ parts

$24.400

100+ parts

$10.200

1k+ parts

$6.960

10k+ parts

-

2,049

$24.400

$10.200

$6.960

-

Verical

USA . 5,600 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$4.099

10k+ parts

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5,600

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-

$4.099

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EBV Elektronik

Germany . 1,600 parts In-Stock

1+ parts

-

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1,600

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-

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Rochester

USA . 1,147 parts In-Stock

1+ parts

-

100+ parts

$4.080

1k+ parts

$3.650

10k+ parts

$3.430

1,147

-

$4.080

$3.650

$3.430

Flip Electronics (Authorized)

USA . 750 parts In-Stock

1+ parts

-

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750

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Distributors (In-Stock)

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Digiode

USA . 2,453 parts In-Stock

1+ parts

$4.123

100+ parts

-

1k+ parts

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2,453

$4.123

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-

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Vyrian

USA . 2,284 parts In-Stock

1+ parts

$4.170

100+ parts

-

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2,284

$4.170

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Chip Stock

USA . 62,000 parts In-Stock

1+ parts

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62,000

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Flip Electronics

USA . 4,800 parts In-Stock

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4,800

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NAC Semi

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$8.910

10k+ parts

$8.100

1,600

-

-

$8.910

$8.100

Cyclops Electronics Ltd

UK . 158 parts In-Stock

1+ parts

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100+ parts

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158

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 138 parts In-Stock

1+ parts

$0.535

100+ parts

-

1k+ parts

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138

$0.535

-

-

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Northwest PG Solutions

USA . 1,474 parts In-Stock

1+ parts

$0.589

100+ parts

-

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10k+ parts

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1,474

$0.589

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Corphita

USA . 1,032 parts In-Stock

1+ parts

$3.906

100+ parts

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1,032

$3.906

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Corohmni

South Africa . 234 parts In-Stock

1+ parts

$4.170

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234

$4.170

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Microchip USA

USA . 6,232 parts In-Stock

1+ parts

$21.748

100+ parts

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6,232

$21.748

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SupplyDigital Components

Austria . 7,115 parts In-Stock

1+ parts

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7,115

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TANS Electronics

Latvia . 6,178 parts In-Stock

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6,178

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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100+ parts

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4,500

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Kulean Microsystems

USA . 3,246 parts In-Stock

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3,246

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Problanco Electronics

Mexico . 2,990 parts In-Stock

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2,990

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Perfect Parts

USA . 1,677 parts In-Stock

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1,677

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Eastek

USA . 800 parts In-Stock

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800

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UHIMA Technologies

Türkiye . 391 parts In-Stock

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391

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Kepictronics

USA . 117 parts In-Stock

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117

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Overview

Discover the superior quality and reliability of the FFSB20120A diode by Onsemi. As a leader in the industry, Onsemi ensures that this rectifier diode provides optimal efficiency in a wide range of applications. With a maximum output current of 32 A and a reverse test voltage of 1200 V, this diode offers unmatched performance and durability. Trust Onsemi to deliver cutting-edge technology with the FFSB20120A, providing you with the value and benefits you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides strong and durable packaging for the diode, ensuring long-lasting usage.

Config: SINGLE

Simplifies circuit design and installation, making it easy to integrate into various applications.

Surface Mount: YES

Facilitates easy mounting on PCBs, saving space and reducing assembly time.

Maximum Reverse Current: 200 uA

Helps maintain low power consumption and improves overall efficiency.

Package Shape: RECTANGULAR

Enables compact and efficient placement within electronic devices or circuits.

Reverse Test Voltage: 1200 V

Provides high reverse voltage protection, ensuring the safety and reliability of the diode.

No. of Terminals: 2

Simplifies connection and installation process in the circuit.

Package Style (Meter): SMALL OUTLINE

Ideal for space-constrained applications, offering a compact form factor.

Application: EFFICIENCY

Designed for applications where efficiency is crucial, making it a reliable choice for high-performance systems.

Maximum Operating Temperature: 175 °C

Ensures stable operation even under high-temperature conditions, enhancing durability.

Technical Specifications

Diodes & Rectifiers FFSB20120A attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

PD-CASE

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON CARBIDE

Diode Type:

Maximum Forward Voltage (VF):

1.75 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

135 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

32 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

333 W

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

1200 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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