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FDS3590

Onsemi

FDS3590 by Onsemi

FDS3590 by Onsemi is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With 6.5A max drain current and 0.037 ohm on resistance, it offers high performance in a small outline package for various electronic designs.

Median Price

$1.600

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,147 parts In-Stock

1+ parts

$0.620

100+ parts

$0.610

1k+ parts

$0.600

10k+ parts

-

5,147

$0.620

$0.610

$0.600

-

DigiKey

USA . 2,485 parts In-Stock

1+ parts

$1.600

100+ parts

$0.670

1k+ parts

$0.479

10k+ parts

-

2,485

$1.600

$0.670

$0.479

-

Mouser Electronics

USA . 1,330 parts In-Stock

1+ parts

$1.600

100+ parts

$0.671

1k+ parts

$0.479

10k+ parts

$0.405

1,330

$1.600

$0.671

$0.479

$0.405

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 93 parts In-Stock

1+ parts

$0.445

100+ parts

-

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-

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93

$0.445

-

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Bristol Electronics

USA . 16 parts In-Stock

1+ parts

$1.125

100+ parts

-

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-

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16

$1.125

-

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Digiode

USA . 2,564 parts In-Stock

1+ parts

$1.254

100+ parts

-

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2,564

$1.254

-

-

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TME

Poland . 427 parts In-Stock

1+ parts

$1.373

100+ parts

$0.576

1k+ parts

$0.513

10k+ parts

-

427

$1.373

$0.576

$0.513

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Component Electronics Inc.

Canada . 73 parts In-Stock

1+ parts

$3.850

100+ parts

$2.880

1k+ parts

$2.500

10k+ parts

-

73

$3.850

$2.880

$2.500

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Chip Stock

USA . 5,112 parts In-Stock

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5,112

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NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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$0.822

5,000

-

-

-

$0.822

IBS Electronics

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.849

5,000

-

-

-

$0.849

Cyclops Electronics Ltd

UK . 4,886 parts In-Stock

1+ parts

-

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4,886

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Vyrian

USA . 2,708 parts In-Stock

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2,708

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Sensible Micro Corp

USA . 2,098 parts In-Stock

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2,098

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ComSIT Distribution GmbH

Germany . 690 parts In-Stock

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690

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Euro-Tech

UK . 215 parts In-Stock

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215

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R&J Components

USA . 200 parts In-Stock

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200

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,710 parts In-Stock

1+ parts

$0.276

100+ parts

-

1k+ parts

-

10k+ parts

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2,710

$0.276

-

-

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Corohmni

South Africa . 496 parts In-Stock

1+ parts

$0.325

100+ parts

-

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-

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496

$0.325

-

-

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Continental Prestige Electronics

USA . 5,556 parts In-Stock

1+ parts

$0.445

100+ parts

-

1k+ parts

-

10k+ parts

$0.436

5,556

$0.445

-

-

$0.436

Argo Parts USA

USA . 3,461 parts In-Stock

1+ parts

$0.445

100+ parts

-

1k+ parts

-

10k+ parts

$0.432

3,461

$0.445

-

-

$0.432

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.445

100+ parts

$0.436

1k+ parts

-

10k+ parts

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100

$0.445

$0.436

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Component Stockers USA

USA . 7,118 parts In-Stock

1+ parts

$0.870

100+ parts

$0.550

1k+ parts

$0.380

10k+ parts

-

7,118

$0.870

$0.550

$0.380

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Corphita

USA . 2,072 parts In-Stock

1+ parts

$1.188

100+ parts

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2,072

$1.188

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Perfect Parts

USA . 89,600 parts In-Stock

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89,600

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Assy Fe

Spain . 33,130 parts In-Stock

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33,130

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Lixinc

USA . 13,747 parts In-Stock

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13,747

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SupplyDigital Components

Austria . 7,953 parts In-Stock

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7,953

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Eastek

USA . 7,500 parts In-Stock

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7,500

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TANS Electronics

Latvia . 6,336 parts In-Stock

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6,336

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Kulean Microsystems

USA . 6,055 parts In-Stock

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6,055

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Problanco Electronics

Mexico . 4,660 parts In-Stock

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4,660

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Kepictronics

USA . 3,000 parts In-Stock

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3,000

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Supply Digital

USA . 2,552 parts In-Stock

1+ parts

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2,552

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UHIMA Technologies

Türkiye . 131 parts In-Stock

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131

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Overview

Unlock the power of efficient switching with the FDS3590 from Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality Small Signal Field Effect Transistors designed for a wide range of applications. With N-CHANNEL polarity and a single configuration with a built-in diode, this transistor offers enhanced performance and reliability. Ideal for switching applications, this FET provides a maximum drain current of 6.5 A and a low on-resistance of 0.037 ohm. Trust Onsemi to deliver cutting-edge technology and superior value with the FDS3590.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and switching operations in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by having a diode included in the transistor.

Transistor Application: SWITCHING

Optimized for fast switching speeds, making it ideal for applications that require rapid on/off transitions.

Minimum DS Breakdown Voltage: 80 V

Provides a high level of voltage protection, ensuring reliable performance in various voltage environments.

Surface Mount: YES

Enables easy installation on circuit boards, saving time and effort in the assembly process.

Maximum Drain Current (Abs) (ID): 6.4 A

Capable of handling high current loads, making it suitable for power-intensive applications.

Maximum Power Dissipation (Abs): 2.5 W

Can dissipate heat effectively, preventing overheating and ensuring stable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high conductivity and low power consumption, enhancing performance efficiency.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, expanding its range of applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDS3590 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (Abs) (ID):

6.4 A

Maximum Drain Current (ID):

6.5 A

Maximum Drain-Source On Resistance:

.037 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS3590 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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