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DTM8C

Onsemi

DTM8C by Onsemi

DTM8C by Onsemi is a TRIAC with 1.5V max on-state voltage, 50mA max DC gate trigger current, and 2mA max leakage current. Ideal for AC applications, it has a max RMS on-state current of 8A and repetitive peak off-state voltage of 200V. Operating b/w -40 °C to 125°C, it suits various triggering needs.

Median Price

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2

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1k+

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Digiode

USA . 2,056 parts In-Stock

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Vyrian

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Native Components

USA . 248 parts In-Stock

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Northwest PG Solutions

USA . 740 parts In-Stock

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TANS Electronics

Latvia . 8,324 parts In-Stock

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Problanco Electronics

Mexico . 4,713 parts In-Stock

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SupplyDigital Components

Austria . 3,125 parts In-Stock

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UHIMA Technologies

Türkiye . 822 parts In-Stock

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Corohmni

South Africa . 476 parts In-Stock

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Kulean Microsystems

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Corphita

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Overview

Looking for a reliable and efficient solution for your TRIAC applications? Look no further than the DTM8C by Onsemi. With a maximum on-state voltage of 1.5V and a maximum RMS on-state current of 8A, this trigger device is designed to provide top-notch performance in a variety of scenarios. Onsemi's reputation for quality and innovation ensures that you are getting a product that is built to last. Say goodbye to downtime and hello to seamless operations with the DTM8C.

Feature Benefit Bullets

Maximum On-state Voltage: 1.5 V

Low on-state voltage ensures efficient power consumption and reduced heat generation during operation.

Maximum DC Gate Trigger Current: 50 mA

High DC gate trigger current allows for reliable and fast switching of the TRIAC.

Maximum Leakage Current: 2 mA

Low leakage current ensures minimal power loss when the device is in the off state, enhancing energy efficiency.

Maximum Operating Temperature: 125 °C

Wide operating temperature range allows for versatility in different environmental conditions.

Trigger Device Type: TRIAC

TRIAC trigger device type offers precise control over the switching of alternating current, making it suitable for various applications.

Minimum Operating Temperature: -40 °C

Ability to operate at low temperatures makes this TRIAC suitable for use in cold environments.

Maximum RMS On-state Current: 8 A

High RMS on-state current rating allows the TRIAC to handle heavy loads without overheating.

Maximum DC Gate Trigger Voltage: 2 V

Low gate trigger voltage ensures efficient control over the TRIAC operation, reducing power consumption.

Repetitive Peak Off-state Voltage: 200 V

High off-state voltage rating allows the TRIAC to withstand voltage spikes and surges, ensuring reliable performance.

Minimum Critical Rate of Rise of Commutation Voltage: 10 V/us

Fast rate of rise of commutation voltage ensures quick and efficient switching of the TRIAC, improving overall performance.

Maximum Holding Current: 50 mA

High holding current ensures the TRIAC remains in the on state even when the gate signal is removed, providing stability in operation.

Technical Specifications

Triode For Alternating Current (TRIAC) DTM8C attributes and parameters. Explore more Triode For Alternating Current (TRIAC) devices from Onsemi

Specs

Minimum Critical Rate of Rise of Commutation Voltage:

10 V/us

Maximum DC Gate Trigger Current:

50 mA

Maximum DC Gate Trigger Voltage:

2 V

Maximum Holding Current:

50 mA

Maximum Leakage Current:

2 mA

Maximum On-state Voltage:

1.5 V

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RMS On-state Current:

8 A

Repetitive Peak Off-state Voltage:

200 V

Sub-Category:

TRIACs

Surface Mount:

NO

Trigger Device Type:

Trade Compliance

DTM8C Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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