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CAT9532HV6I

Onsemi

CAT9532HV6I by Onsemi

CAT9532HV6I by Onsemi is a 24-terminal parallel I/O port with 16 I/O lines. It operates b/w -40 to 85 °C and supports supply voltages from 2.3V to 5.5V. Ideal for industrial applications requiring CMOS technology and compact design with a 0.8mm seated height.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,839 parts In-Stock

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Vyrian

USA . 244 parts In-Stock

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Distributors (Availability)

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Problanco Electronics

Mexico . 8,284 parts In-Stock

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SupplyDigital Components

Austria . 8,038 parts In-Stock

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Kulean Microsystems

USA . 4,578 parts In-Stock

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Corphita

USA . 2,317 parts In-Stock

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Northwest PG Solutions

USA . 1,994 parts In-Stock

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TANS Electronics

Latvia . 1,283 parts In-Stock

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Native Components

USA . 971 parts In-Stock

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UHIMA Technologies

Türkiye . 801 parts In-Stock

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Corohmni

South Africa . 393 parts In-Stock

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Overview

Enhance your electronic designs with the CAT9532HV6I from Onsemi, a leading manufacturer known for its superior quality and reliability. This Parallel I/O Port offers versatile applications in various industries, providing customers with exceptional value and benefits. With a wide supply voltage range, compact package style, and industrial temperature grade, this product ensures optimal performance and flexibility. Trust Onsemi to deliver innovative solutions that meet your needs and exceed your expectations. Elevate your projects with the CAT9532HV6I today!

Feature Benefit Bullets

Surface Mount: YES

Surface mount capability allows for easy and secure installation on a PCB, saving space and reducing assembly time.

Maximum Supply Voltage: 5.5 V

Supports a wide range of supply voltages, making it versatile for different applications.

Package Shape: SQUARE

Square package shape provides a compact design, optimizing space on the circuit board.

No. of Terminals: 24

Having 24 terminals allows for more connectivity options, increasing the flexibility of the product.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The package style of chip carrier, heat sink/slub, and very thin profile enhances thermal management and overall performance.

Minimum Supply Voltage: 2.3 V

Low minimum supply voltage requirements enable operation in low-power environments, making it energy efficient.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliability in harsh environments or under heavy load conditions.

Minimum Operating Temperature: -40 °C

Wide range of operating temperatures allows for use in extreme conditions, maintaining consistent performance.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring a reliable connection.

Terminal Position: QUAD

Quad terminal position allows for secure and stable connections, reducing the risk of signal interference.

Maximum Seated Height: 0.8 mm

Low maximum seated height contributes to a slim profile and facilitates compact PCB design.

Width: 4 mm

Narrow width enables space-saving integration into various electronic devices.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures stable solder joints during manufacturing, improving product reliability.

Length: 4 mm

Short length contributes to a compact form factor, suitable for applications with limited space.

Temperature Grade: INDUSTRIAL

Industrial temperature grade rating ensures reliability and performance in demanding industrial environments.

Peripheral IC Type: PARALLEL IO PORT, GENERAL PURPOSE

Peripheral IC type allows for easy interfacing with various devices and systems, making it versatile for general purpose applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, enhancing performance and efficiency.

Terminal Form: NO LEAD

No-lead terminal form eliminates the risk of lead contamination and ensures compliance with environmental regulations.

Terminal Pitch: 0.5 mm

Compact terminal pitch provides high-density mounting capabilities, enabling space-efficient PCB layouts.

No. of I/O Lines: 16

16 I/O lines offer ample connectivity options for diverse input and output requirements, enhancing the product's functionality.

Technical Specifications

Parallel I/O Ports CAT9532HV6I attributes and parameters. Explore more Parallel I/O Ports devices from Onsemi

Specs

JESD-30 Code:

S-XQCC-N24

JESD-609 Code:

e3

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

No. of I/O Lines:

16

No. of Ports:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

2.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

4 mm

Peripheral IC Type:

Trade Compliance

CAT9532HV6I Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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