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CAT9532HT6I-GT2

Onsemi

CAT9532HT6I-GT2 by Onsemi

CAT9532HT6I-GT2 by Onsemi is a Parallel I/O Port IC with 16 I/O lines, operating voltage range of 2.3V to 5.5V, and industrial temperature grade up to 85 °C. It features a compact square package style with nickel palladium gold finish, suitable for various general-purpose applications requiring precise digital signal control in tight spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,518 parts In-Stock

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Vyrian

USA . 497 parts In-Stock

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TANS Electronics

Latvia . 7,496 parts In-Stock

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Corphita

USA . 2,026 parts In-Stock

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Northwest PG Solutions

USA . 1,848 parts In-Stock

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Problanco Electronics

Mexico . 1,238 parts In-Stock

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Kulean Microsystems

USA . 528 parts In-Stock

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Native Components

USA . 309 parts In-Stock

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UHIMA Technologies

Türkiye . 304 parts In-Stock

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Corohmni

South Africa . 288 parts In-Stock

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SupplyDigital Components

Austria . 66 parts In-Stock

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Overview

Enhance your electronic projects with the CAT9532HT6I-GT2 by Onsemi, a top-of-the-line Parallel I/O Ports component. Onsemi is known for its superior quality and innovative technology, making this product a reliable choice for a wide range of applications. With a compact square package shape and a wide temperature range, this chip carrier offers flexibility and durability. Experience seamless connectivity and enhanced functionality with 16 I/O lines and a nominal supply voltage of 3V. Trust Onsemi to deliver excellence in every detail.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient mounting on PCBs, saving space and simplifying assembly process.

Maximum Supply Voltage: 5.5 V

Can handle a wide range of supply voltages, offering flexibility in different application scenarios.

Package Shape: SQUARE

Square package shape is easily mountable and provides a compact form factor for efficient PCB layout.

No. of Terminals: 24

Provides a sufficient number of terminals for connecting input/output devices, offering versatility in connectivity.

Minimum Supply Voltage: 2.3 V

Works efficiently even at low supply voltages, making it suitable for power-constrained applications.

Maximum Operating Temperature: 85 °C

Can operate reliably at high temperatures, ensuring stability in demanding environments.

Minimum Operating Temperature: -40 °C

Able to function in extreme cold conditions, making it suitable for a wide range of operating environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides good conductivity and corrosion resistance, ensuring reliable electrical connections over time.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for efficient operation.

Nominal Supply Voltage: 3 V

Optimal supply voltage for efficient performance, balancing power efficiency and functionality.

Technical Specifications

Parallel I/O Ports CAT9532HT6I-GT2 attributes and parameters. Explore more Parallel I/O Ports devices from Onsemi

Specs

JESD-30 Code:

S-XQCC-N24

JESD-609 Code:

e4

Length:

4 mm

No. of I/O Lines:

16

No. of Ports:

1

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

2.3 V

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

4 mm

Peripheral IC Type:

Trade Compliance

CAT9532HT6I-GT2 Peripheral ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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