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CAT824STDI-GT3

Onsemi

CAT824STDI-GT3 by Onsemi

CAT824STDI-GT3 by Onsemi is a Power Management IC with 5 terminals, operating b/w -40 to 85 °C. It has a supply voltage range of 2-3.6V and peak reflow temp of 260 °C. Ideal for industrial applications requiring power supply management in compact spaces.

Median Price

$0.270

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,180 parts In-Stock

1+ parts

$0.270

100+ parts

$0.260

1k+ parts

$0.260

10k+ parts

-

8,180

$0.270

$0.260

$0.260

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,327 parts In-Stock

1+ parts

$0.256

100+ parts

-

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1,327

$0.256

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-

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Vyrian

USA . 1,907 parts In-Stock

1+ parts

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1,907

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Distributors (Availability)

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Corphita

USA . 805 parts In-Stock

1+ parts

$0.243

100+ parts

-

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-

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805

$0.243

-

-

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Corohmni

South Africa . 478 parts In-Stock

1+ parts

$0.270

100+ parts

-

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478

$0.270

-

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Native Components

USA . 487 parts In-Stock

1+ parts

$1.060

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487

$1.060

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-

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Northwest PG Solutions

USA . 696 parts In-Stock

1+ parts

$1.166

100+ parts

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696

$1.166

-

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AZTECH Wire

Italy . 977 parts In-Stock

1+ parts

$20.810

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977

$20.810

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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QUARKTWIN TECHNOLOGY LTD

USA . 25,750 parts In-Stock

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25,750

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TANS Electronics

Latvia . 7,480 parts In-Stock

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7,480

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SupplyDigital Components

Austria . 6,921 parts In-Stock

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6,921

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Microchip USA

USA . 5,649 parts In-Stock

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5,649

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Kulean Microsystems

USA . 4,380 parts In-Stock

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4,380

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Problanco Electronics

Mexico . 3,786 parts In-Stock

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3,786

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Metaverse IC Inc.

Canada . 868 parts In-Stock

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868

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UHIMA Technologies

Türkiye . 818 parts In-Stock

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818

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Overview

Unlock the power of efficient power management with the CAT824STDI-GT3 by Onsemi. Crafted with precision and reliability, this Power Management IC is designed to enhance performance and optimize energy consumption in a variety of applications. From industrial settings to consumer electronics, this innovative product offers unmatched value and benefits for customers seeking top-notch quality and efficiency. Trust Onsemi's reputation for excellence and experience the advantages of superior power management technology with the CAT824STDI-GT3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy package body material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and cost in production.

Nominal Supply Voltage (Vsup): 3.3 V

The nominal supply voltage of 3.3V is a common standard in many electronic systems, ensuring compatibility with a wide range of applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this product is suitable for use in industrial environments where temperatures can vary.

Width (mm): 1.6 mm

The compact width of 1.6mm allows for space-saving designs, making it suitable for small form factor devices.

Minimum Supply Voltage (Vsup): 2 V

The minimum supply voltage of 2V ensures efficient power management even at low voltage levels, making it versatile for different power sources.

Terminal Pitch: 0.95 mm

The small terminal pitch of 0.95mm allows for high-density mounting on the PCB, enabling more functionality in a limited space.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V provides a safety margin for unexpected voltage spikes, protecting the IC and connected components.

Technical Specifications

Power Management ICs CAT824STDI-GT3 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 3.08V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/5.5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.012 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+3.08V

Width (mm):

1.6 mm

Trade Compliance

CAT824STDI-GT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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