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CAT823RSDI-GT3

Onsemi

CAT823RSDI-GT3 by Onsemi

CAT823RSDI-GT3 by Onsemi is a Power Management IC with 5 terminals, operating b/w -40 to 85°C. It has a supply voltage range of 2-3.6V and peak reflow temperature of 260°C. Ideal for industrial applications requiring power supply management circuits in compact spaces.

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3

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1k+

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Digiode

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Vyrian

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Nova Conductors

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AZTECH Wire

Italy . 430 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Glotronic Ltd.

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Problanco Electronics

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SupplyDigital Components

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TANS Electronics

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Kulean Microsystems

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Aranea Global

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UHIMA Technologies

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Microchip USA

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Overview

Discover the power of efficient energy management with the CAT823RSDI-GT3 by Onsemi. Crafted with precision and reliability, this Power Management IC offers unparalleled performance for a wide range of applications. From industrial settings to consumer electronics, this small yet powerful device ensures optimal power supply management, ensuring seamless operation and longevity. Embrace the future of technology with Onsemi's cutting-edge solutions. Upgrade now and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material for improved reliability and longevity.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage (Vsup): 3 V

Optimal voltage for stable performance.

No. of Terminals: 5

Simplified connectivity for ease of use.

Maximum Operating Temperature: 85 °C

Can function reliably in high-temperature environments.

Minimum Operating Temperature: -40 °C

Can operate in low-temperature conditions as well.

Terminal Finish: NICKEL PALLADIUM GOLD

Enhanced conductivity and corrosion resistance.

Width (mm): 1.25 mm

Compact size for space-constrained applications.

Minimum Supply Voltage (Vsup): 2 V

Allows for operation at lower voltage levels.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high temperatures during soldering processes.

Peak Reflow Temperature °C: 260

Can endure high-temperature reflow soldering.

Nominal Threshold Voltage (V): +2.63V

Precise threshold voltage for accurate operation.

Temperature Grade: INDUSTRIAL

Suitable for industrial environments with varying temperature conditions.

Maximum Supply Current (Isup): 0.012 mA

Low power consumption for energy efficiency.

Terminal Pitch: 0.65 mm

Fine pitch for compact designs and efficient routing.

Maximum Supply Voltage (Vsup): 3.6 V

Can handle higher voltages for flexibility in power input.

Technical Specifications

Power Management ICs CAT823RSDI-GT3 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2.63V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/5.5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.012 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.63V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.25 mm

Trade Compliance

CAT823RSDI-GT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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