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CAT803JSDI-GT3

Onsemi

CAT803JSDI-GT3 by Onsemi

CAT803JSDI-GT3 by Onsemi is a Power Management IC with 5V nominal voltage, suitable for industrial applications. It features a small outline package style, dual terminal position, and nickel palladium gold finish. With a temperature range of -40 to 85 °C, it supports power supply circuits efficiently.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 407 parts In-Stock

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Component Stockers USA

USA . 774 parts In-Stock

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Kulean Microsystems

USA . 8,308 parts In-Stock

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TANS Electronics

Latvia . 5,119 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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Corphita

USA . 1,852 parts In-Stock

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SupplyDigital Components

Austria . 1,406 parts In-Stock

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Northwest PG Solutions

USA . 627 parts In-Stock

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UHIMA Technologies

Türkiye . 447 parts In-Stock

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Problanco Electronics

Mexico . 175 parts In-Stock

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Microchip USA

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Corohmni

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Overview

Discover the cutting-edge CAT803JSDI-GT3 by Onsemi, a high-quality Power Management IC perfect for a wide range of applications. With Onsemi's reputation for excellence and innovation, this product offers unparalleled value and benefits to customers. Whether you're looking for power supply support or efficient management solutions, this small outline, thin profile IC delivers reliability and performance. Upgrade your systems with the CAT803JSDI-GT3 and experience the advantages of Onsemi technology firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for electronic applications.

Surface Mount: YES

Being surface mountable makes installation and assembly easier and more efficient.

Nominal Supply Voltage (Vsup): 5 V

Compatible with standard 5V power supplies, making it widely applicable in various systems.

Maximum Operating Temperature: 85 °C

Can operate efficiently in higher temperature environments, ensuring reliability in different conditions.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications where durability and performance under harsh conditions are required.

Terminal Pitch: 0.65 mm

The fine terminal pitch allows for compact design and efficient use of board space.

Technical Specifications

Power Management ICs CAT803JSDI-GT3 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 4V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOT-323

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.02 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+4V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.25 mm

Trade Compliance

CAT803JSDI-GT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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