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CAT809ZSDI-T3

Onsemi

CAT809ZSDI-T3 by Onsemi

CAT809ZSDI-T3 by Onsemi is a Power Management IC with 2.5V supply voltage, -40 to 85°C operating temperature range, and 1.1mm seated height. Ideal for industrial applications requiring power supply support circuits in compact spaces due to its small outline package style and dual terminal position.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 870 parts In-Stock

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870

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Digiode

USA . 382 parts In-Stock

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382

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Vyrian

USA . 353 parts In-Stock

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353

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AZTECH Wire

Italy . 353 parts In-Stock

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$7.481

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353

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Component Stockers USA

USA . 496 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Argo Parts USA

USA . 4,234 parts In-Stock

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TANS Electronics

Latvia . 3,958 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Continental Prestige Electronics

USA . 3,514 parts In-Stock

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Kulean Microsystems

USA . 3,245 parts In-Stock

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Corphita

USA . 1,413 parts In-Stock

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SupplyDigital Components

Austria . 1,377 parts In-Stock

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Perfect Parts

USA . 896 parts In-Stock

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Problanco Electronics

Mexico . 847 parts In-Stock

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UHIMA Technologies

Türkiye . 833 parts In-Stock

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Corohmni

South Africa . 424 parts In-Stock

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Microchip USA

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Bastille Electronics

Australia . 46 parts In-Stock

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Overview

Enhance your power management capabilities with the CAT809ZSDI-T3 by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge Power Management ICs that are ideal for a wide range of applications. The CAT809ZSDI-T3 is designed to provide efficient power supply support in a compact and durable package, making it perfect for industrial use. With a nominal supply voltage of 2.5V and dual terminal position, this product offers exceptional value and performance. Upgrade your power management system today with the CAT809ZSDI-T3 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product durable and lightweight, suitable for a variety of applications.

Surface Mount: YES

Being surface mountable makes this product easy to install and reduces the overall size of the system, saving valuable space on the PCB.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on the PCB and easy integration into existing designs.

Nominal Supply Voltage (Vsup): 2.5 V

With a nominal supply voltage of 2.5V, this product is compatible with a wide range of systems and can efficiently regulate power.

Power Supplies (V): 2.5

Operating at 2.5V ensures stable power delivery, making this product ideal for power management applications.

No. of Terminals: 3

The three terminals provide flexibility in connecting external components, allowing for versatile usage in different circuit configurations.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style enhances the overall compactness and efficiency of the product.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this product can withstand high-temperature environments, ensuring reliable performance.

Minimum Operating Temperature: -40 °C

Operating at temperatures as low as -40°C makes this product suitable for a wide range of operating conditions.

Terminal Finish: TIN

The tin terminal finish provides a reliable connection, enhancing the overall performance and longevity of the product.

Technical Specifications

Power Management ICs CAT809ZSDI-T3 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2.32V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOT-323

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.015 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+2.32V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

1.25 mm

Trade Compliance

CAT809ZSDI-T3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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