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CAT803LSDI-T3

Onsemi

CAT803LSDI-T3 by Onsemi

CAT803LSDI-T3 by Onsemi is a Power Management IC with 5V nominal voltage. It features small outline, thin profile package style and operates in industrial temperature range (-40 to 85 °C). Ideal for power supply support circuits, it has 3 terminals and surface mount capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,142 parts In-Stock

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Digiode

USA . 1,058 parts In-Stock

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Native Components

USA . 246 parts In-Stock

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$0.517

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Northwest PG Solutions

USA . 243 parts In-Stock

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$0.569

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243

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Kulean Microsystems

USA . 7,399 parts In-Stock

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SupplyDigital Components

Austria . 4,534 parts In-Stock

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Corphita

USA . 2,444 parts In-Stock

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Problanco Electronics

Mexico . 1,375 parts In-Stock

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TANS Electronics

Latvia . 1,299 parts In-Stock

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UHIMA Technologies

Türkiye . 347 parts In-Stock

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Corohmni

South Africa . 181 parts In-Stock

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Overview

Enhance your power management system with the CAT803LSDI-T3 from Onsemi, a leading manufacturer known for top-quality Power Management ICs. This small outline, thin profile device offers reliable performance in industrial applications, ensuring a stable supply voltage of 5V. With its dual terminal position and maximum seated height of 1.1mm, this product is perfect for space-constrained designs. Trust Onsemi to deliver innovative solutions that provide value, efficiency, and peace of mind to customers seeking high-performance power supply support circuits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to various environmental factors, making the product suitable for a wide range of applications.

Surface Mount: YES

Being surface mountable allows for easy installation on PCBs, saving space and enabling efficient production processes.

Nominal Supply Voltage (Vsup): 5 V

The nominal supply voltage of 5 V makes it compatible with standard power sources, ensuring seamless integration into existing systems.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C allows for reliable performance in various operating conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C ensures functionality even in harsh environments or extreme temperatures.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance, enhancing the product's longevity and reliability.

Width (mm): 1.25 mm

The compact width of 1.25 mm enables the product to be used in space-constrained applications without compromising on performance.

Minimum Supply Voltage (Vsup): 1.2 V

The minimum supply voltage of 1.2 V allows for flexible power input options, accommodating a range of power sources.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that the product can withstand demanding industrial environments and operate reliably under challenging conditions.

Maximum Supply Current (Isup): 0.02 mA

The low maximum supply current of 0.02 mA indicates power efficiency, making the product suitable for energy-sensitive applications.

Technical Specifications

Power Management ICs CAT803LSDI-T3 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 4.63V

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Length:

2 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOT-323

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

.02 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Nominal Threshold Voltage (V):

+4.63V

Width (mm):

1.25 mm

Trade Compliance

CAT803LSDI-T3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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