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CAT64LC10SI

Onsemi

CAT64LC10SI by Onsemi

CAT64LC10SI by Onsemi is a 1024-bit EEPROM with 64x16 organization, operating at 1 MHz clock frequency. It features hardware/software write protection and SPI serial bus type for industrial applications. With a small outline package style and Gull Wing terminal form, it offers endurance of 1M cycles and operates in the -40 to 85 °C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,960 parts In-Stock

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Vyrian

USA . 1,303 parts In-Stock

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TANS Electronics

Latvia . 8,072 parts In-Stock

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Kulean Microsystems

USA . 5,842 parts In-Stock

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Northwest PG Solutions

USA . 1,735 parts In-Stock

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$3.535

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SupplyDigital Components

Austria . 1,079 parts In-Stock

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Native Components

USA . 938 parts In-Stock

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$3.499

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938

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$3.499

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Problanco Electronics

Mexico . 881 parts In-Stock

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881

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Corphita

USA . 364 parts In-Stock

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Corohmni

South Africa . 76 parts In-Stock

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UHIMA Technologies

Türkiye . 26 parts In-Stock

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Overview

Discover the CAT64LC10SI by Onsemi, a high-quality EEPROM that offers unparalleled value and benefits. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for various applications where reliable non-volatile memory storage is needed. With its small outline package and hardware/software write protection, customers can trust in the durability and security of their data. Experience the advantages of this industrial-grade product, from its wide operating temperature range to its fast clock frequency, making it a versatile choice for any project. Trust in Onsemi's expertise and choose the CAT64LC10SI for your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protects the internal components of the EEPROM, ensuring long-term reliability.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving design in electronic circuits.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient and coordinated data transfer, enhancing overall performance.

Nominal Supply Voltage (Vsup): 5V

Operating at a standard voltage of 5V makes it compatible with various electronic systems and power sources.

Package Style: SMALL OUTLINE

Small outline package style saves space on the circuit board, making it ideal for compact electronic devices.

Memory Density: 1024 bit

With a high memory density of 1024 bit, this EEPROM can store a large amount of data efficiently.

Endurance: 1000000 Write/Erase Cycles

High endurance of 1,000,000 write/erase cycles ensures longevity and reliability of the EEPROM.

Serial Bus Type: SPI

Serial Peripheral Interface (SPI) provides fast and efficient communication with other devices, enhancing connectivity and data transfer speed.

Technical Specifications

EEPROM CAT64LC10SI attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

SPI BUS INTERFACE

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT64LC10SI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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