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CAT64LC10U

Onsemi

CAT64LC10U by Onsemi

CAT64LC10U by Onsemi is an EEPROM with 64x16 organization, operating at 1 MHz clock frequency. It has a memory density of 1024 bit and supports SPI serial bus type. Ideal for applications requiring low power consumption and small footprint in commercial temperature grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,029 parts In-Stock

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2,029

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Vyrian

USA . 71 parts In-Stock

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71

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 759 parts In-Stock

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$23.979

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759

$23.979

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Northwest PG Solutions

USA . 2,304 parts In-Stock

1+ parts

$26.376

100+ parts

$23.739

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2,304

$26.376

$23.739

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TANS Electronics

Latvia . 8,186 parts In-Stock

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8,186

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Kulean Microsystems

USA . 6,818 parts In-Stock

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6,818

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Problanco Electronics

Mexico . 4,940 parts In-Stock

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4,940

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SupplyDigital Components

Austria . 3,770 parts In-Stock

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3,770

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Corohmni

South Africa . 394 parts In-Stock

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394

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Corphita

USA . 256 parts In-Stock

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256

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UHIMA Technologies

Türkiye . 162 parts In-Stock

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162

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Overview

Unlock endless possibilities with the CAT64LC10U EEPROM from Onsemi. This high-quality memory IC offers a reliable solution for a wide range of applications, from consumer electronics to industrial automation. With a durable plastic/epoxy package and synchronous operation, this EEPROM ensures seamless performance in any environment. Enjoy the convenience of hardware/software write protection and a small outline, thin profile design for easy integration. Trust Onsemi's expertise in semiconductor technology to deliver a product that exceeds expectations and adds exceptional value to your projects. Elevate your designs with the CAT64LC10U today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the EEPROM lightweight and durable, ideal for portable devices.

Surface Mount: YES

Being surface mountable allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes this EEPROM compatible with a wide range of electronic devices.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this EEPROM can withstand high temperature environments, increasing its versatility.

Technology: CMOS

The use of CMOS technology ensures low power consumption and high noise immunity, making this EEPROM energy efficient and reliable.

Endurance: 1000000 Write/Erase Cycles

The high endurance of 1,000,000 write/erase cycles ensures longevity and reliability of data storage in the EEPROM.

Technical Specifications

EEPROM CAT64LC10U attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.4 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT64LC10U Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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