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CAT64LC10J-TE13

Onsemi

CAT64LC10J-TE13 by Onsemi

CAT64LC10J-TE13 by Onsemi is an EEPROM with 64X16 organization, 3.3V nominal voltage, and 1MHz clock frequency. It is used in applications requiring small outline packages, synchronous operation, and SPI serial bus type for data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,581 parts In-Stock

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1,581

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Vyrian

USA . 44 parts In-Stock

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44

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Distributors (Availability)

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Native Components

USA . 986 parts In-Stock

1+ parts

$235.381

100+ parts

$230.673

1k+ parts

$228.320

10k+ parts

$225.966

986

$235.381

$230.673

$228.320

$225.966

Northwest PG Solutions

USA . 1,635 parts In-Stock

1+ parts

$258.919

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$258.919

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Problanco Electronics

Mexico . 7,240 parts In-Stock

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TANS Electronics

Latvia . 4,692 parts In-Stock

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4,692

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Kulean Microsystems

USA . 3,826 parts In-Stock

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3,826

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SupplyDigital Components

Austria . 1,669 parts In-Stock

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Corphita

USA . 1,412 parts In-Stock

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1,412

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UHIMA Technologies

Türkiye . 883 parts In-Stock

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883

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Corohmni

South Africa . 442 parts In-Stock

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Overview

Experience the reliability and performance of the CAT64LC10J-TE13 EEPROM from Onsemi. With a reputation for excellence, Onsemi delivers top-quality products that meet stringent standards. This EEPROM is versatile and ideal for a variety of applications, offering customers value and peace of mind. Trust in the advantages of this product to enhance your projects and ensure seamless operation. Choose Onsemi for superior quality and unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material ensures the longevity of the product, making it a good choice for long-term use.

Surface Mount: YES

Easy to install and suitable for compact electronic devices, making it a versatile and convenient option.

Operating Mode: SYNCHRONOUS

Efficient data transfer and communication with other synchronous components, ensuring seamless performance.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage supply for the EEPROM, ensuring stable operation and reliable data storage.

Write Protection: HARDWARE/SOFTWARE

Enhanced security features to protect the stored data from unauthorized access or accidental deletion, adding to the reliability of the product.

Endurance: 1000000 Write/Erase Cycles

High endurance for write and erase cycles, providing reliable and long-lasting memory storage capabilities.

Memory Density: 1024 bit

Sufficient memory capacity for storing essential data, making it suitable for various applications.

Serial Bus Type: SPI

Efficient serial communication protocol for fast and reliable data transfer, enhancing the overall performance of the product.

Technical Specifications

EEPROM CAT64LC10J-TE13 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT64LC10J-TE13 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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