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CAT64LC10S

Onsemi

CAT64LC10S by Onsemi

CAT64LC10S by Onsemi is an EEPROM with 64x16 organization, operating at 5V. It features a max clock frequency of 1MHz and offers hardware/software write protection. Ideal for applications requiring small outline packages and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 939 parts In-Stock

1+ parts

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939

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Vyrian

USA . 191 parts In-Stock

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191

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 919 parts In-Stock

1+ parts

$51.187

100+ parts

-

1k+ parts

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10k+ parts

$49.140

919

$51.187

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$49.140

Northwest PG Solutions

USA . 1,948 parts In-Stock

1+ parts

$56.306

100+ parts

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1,948

$56.306

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TANS Electronics

Latvia . 7,894 parts In-Stock

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7,894

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Kulean Microsystems

USA . 5,373 parts In-Stock

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5,373

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SupplyDigital Components

Austria . 5,035 parts In-Stock

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5,035

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Problanco Electronics

Mexico . 3,621 parts In-Stock

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3,621

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Corphita

USA . 1,800 parts In-Stock

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1,800

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UHIMA Technologies

Türkiye . 169 parts In-Stock

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169

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Corohmni

South Africa . 61 parts In-Stock

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61

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Overview

Discover the CAT64LC10S by Onsemi, a high-quality EEPROM that offers reliable data storage solutions for a wide range of applications. With Onsemi's reputation for excellence in semiconductor manufacturing, this product delivers unparalleled performance and durability. Ideal for use in various devices, the CAT64LC10S provides customers with value, benefits, and advantages that set it apart from the competition. Experience peace of mind knowing your data is safe and secure with this innovative EEPROM from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy installation on PCBs, making it suitable for mass production.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient data transfer and communication with other components in the system.

Nominal Supply Voltage / Vsup (V): 5

Works reliably at a standard supply voltage, making it compatible with a wide range of systems.

Write Protection: HARDWARE/SOFTWARE

Offers options for write protection, providing security for stored data.

Maximum Clock Frequency (fCLK): 1 MHz

High clock frequency allows for fast data transfer and processing.

Endurance: 1000000 Write/Erase Cycles

High endurance ensures longevity and reliability for frequent read/write operations.

Technical Specifications

EEPROM CAT64LC10S attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

SPI BUS INTERFACE

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT64LC10S Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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