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CAT64LC10PI

Onsemi

CAT64LC10PI by Onsemi

CAT64LC10PI by Onsemi is an 8-terminal EEPROM with 64x16 organization, operating at 3.3V. It features a max clock frequency of 1MHz and offers hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Digiode

USA . 449 parts In-Stock

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Vyrian

USA . 220 parts In-Stock

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Native Components

USA . 903 parts In-Stock

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$51.187

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$49.140

903

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$49.140

Northwest PG Solutions

USA . 985 parts In-Stock

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$56.306

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TANS Electronics

Latvia . 6,978 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Problanco Electronics

Mexico . 4,550 parts In-Stock

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Kulean Microsystems

USA . 2,561 parts In-Stock

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UHIMA Technologies

Türkiye . 959 parts In-Stock

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Corphita

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Corohmni

South Africa . 405 parts In-Stock

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SupplyDigital Components

Austria . 27 parts In-Stock

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Overview

Unlock the power of reliable data storage with the CAT64LC10PI EEPROM by Onsemi. Manufactured with precision and quality in mind, this versatile device is perfect for a wide range of applications. From industrial automation to consumer electronics, this EEPROM offers unmatched value, benefits, and advantages to customers. Trust in Onsemi's reputation for excellence and choose the CAT64LC10PI for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides protection to the internal components of the EEPROM, ensuring long-term reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and efficient communication with other devices in a system.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is commonly used in many electronic devices, making this EEPROM compatible with a wide range of applications.

No. of Terminals: 8

The 8 terminals provide connectivity for input/output signals, power, and control, simplifying the integration of the EEPROM into a circuit.

Organization: 64X16

The 64x16 organization allows for efficient data storage and retrieval, making this EEPROM suitable for storing small data sets.

Write Protection: HARDWARE/SOFTWARE

The option for both hardware and software write protection enhances the security of the stored data, preventing unauthorized access or modification.

Maximum Clock Frequency (fCLK): 1 MHz

The 1 MHz clock frequency enables fast data transfer and processing speeds, improving the overall performance of the EEPROM.

Memory Density: 1024 bit

With a memory density of 1024 bits, this EEPROM can store a moderate amount of data, suitable for various applications.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating of 1 million write/erase cycles ensures the longevity and reliability of the EEPROM for frequent data updates.

Serial Bus Type: SPI

The Serial Peripheral Interface (SPI) bus type allows for easy integration with other SPI-compatible devices, enabling efficient communication and data transfer.

Technical Specifications

EEPROM CAT64LC10PI attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

SPI BUS SERIAL INTERFACE; AUTOMATIC WRITE

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e0

Length:

9.59 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT64LC10PI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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