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CAT64LC10LI

Onsemi

CAT64LC10LI by Onsemi

CAT64LC10LI by Onsemi is an 8-terminal EEPROM with 64x16 organization, operating at 3V. It features a max clock frequency of 1MHz and offers hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,101 parts In-Stock

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1,101

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Vyrian

USA . 454 parts In-Stock

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454

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 633 parts In-Stock

1+ parts

$0.193

100+ parts

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$0.185

633

$0.193

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$0.185

Northwest PG Solutions

USA . 1,892 parts In-Stock

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$0.212

100+ parts

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$0.187

1,892

$0.212

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$0.187

Kulean Microsystems

USA . 3,005 parts In-Stock

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3,005

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TANS Electronics

Latvia . 2,464 parts In-Stock

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2,464

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Problanco Electronics

Mexico . 1,864 parts In-Stock

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1,864

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Corphita

USA . 836 parts In-Stock

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836

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UHIMA Technologies

Türkiye . 516 parts In-Stock

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516

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Corohmni

South Africa . 356 parts In-Stock

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356

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SupplyDigital Components

Austria . 109 parts In-Stock

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Overview

Unlock a world of possibilities with the CAT64LC10LI by Onsemi. Crafted with precision and expertise, this EEPROM offers unmatched reliability and performance. Perfect for a wide range of applications, this product is designed to meet all your memory storage needs. With a focus on quality and innovation, Onsemi delivers a product that provides exceptional value and benefits to customers. Experience seamless operation and peace of mind knowing you have a trusted and dependable solution at your fingertips. Elevate your projects with the CAT64LC10LI by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the EEPROM, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and control, making data transfer more efficient.

Nominal Supply Voltage / Vsup (V): 3

Optimal supply voltage for reliable performance of the EEPROM.

Organization: 64X16

This organization structure allows for efficient storage and retrieval of data.

Maximum Operating Temperature: 85 °C

High maximum operating temperature makes this EEPROM suitable for industrial environments where heat may be a concern.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the EEPROM energy efficient and reliable.

Endurance: 1000000 Write/Erase Cycles

High endurance ensures longevity and reliability of the EEPROM, suitable for frequent read/write operations.

Serial Bus Type: SPI

SPI serial bus type allows for high-speed communication and easy integration with other devices.

Technical Specifications

EEPROM CAT64LC10LI attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.59 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT64LC10LI Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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