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BF721T3

Onsemi

BF721T3 by Onsemi

BF721T3 by Onsemi is a PNP BJT with 4 terminals in GULL WING package. It has hFE of 50, VCE of 300V, and IC of 0.1A. Ideal for applications requiring high voltage switching and amplification in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 986 parts In-Stock

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986

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Vyrian

USA . 737 parts In-Stock

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737

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Distributors (Availability)

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Native Components

USA . 695 parts In-Stock

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$0.453

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$0.434

695

$0.453

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$0.434

Northwest PG Solutions

USA . 76 parts In-Stock

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$0.498

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$0.439

76

$0.498

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$0.439

Kulean Microsystems

USA . 7,890 parts In-Stock

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7,890

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SupplyDigital Components

Austria . 6,686 parts In-Stock

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6,686

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Problanco Electronics

Mexico . 5,530 parts In-Stock

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5,530

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Corphita

USA . 2,045 parts In-Stock

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2,045

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TANS Electronics

Latvia . 592 parts In-Stock

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592

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UHIMA Technologies

Türkiye . 370 parts In-Stock

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370

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Corohmni

South Africa . 51 parts In-Stock

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51

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Overview

Upgrade your electronic projects with the high-quality BF721T3 Small Signal Bipolar Junction Transistor from Onsemi. From its durable plastic/epoxy package to its PNP polarity and single configuration, this transistor offers reliability and performance. Ideal for a variety of applications, this transistor is perfect for those seeking a versatile component for their designs. Trust in Onsemi's reputation for excellence and invest in the BF721T3 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for portable and long-lasting electronic devices.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration with existing PNP transistor circuits, enhancing compatibility and flexibility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to incorporate into various applications.

Surface Mount: YES

The surface mount capability enables easy and compact PCB assembly, saving space and facilitating automated manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient PCB layout and placement, optimizing space utilization and enhancing overall design aesthetics.

Terminal Form: GULL WING

The gull wing terminal form enhances solder joint reliability and allows for easy inspection during assembly, ensuring robust electrical connections.

No. of Terminals: 4

The four terminals provide versatile connection options and allow for multiple circuit configurations, increasing design flexibility.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers a compact footprint, making it suitable for space-constrained applications and enabling efficient PCB design.

Minimum DC Current Gain (hFE): 50

The minimum DC current gain of 50 ensures reliable amplification of input signals, guaranteeing consistent and stable performance in various operating conditions.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage of 300 V enables the transistor to handle high voltage applications, providing robust performance in demanding environments.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high reliability, temperature stability, and low leakage current, enhancing overall device performance.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A allows for safe operation within specified limits, preventing overheating and ensuring long-term reliability in circuit applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers excellent solderability and corrosion resistance, ensuring reliable electrical connections and enhancing overall product longevity.

Terminal Position: DUAL

The dual terminal position provides additional flexibility in circuit layout and component placement, allowing for enhanced functionality and customization.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and enhances heat dissipation, improving overall efficiency and reliability of the transistor.

Nominal Transition Frequency (fT): 60 MHz

The nominal transition frequency of 60 MHz indicates the speed at which the transistor can switch between on and off states, making it suitable for high-frequency applications and fast switching circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF721T3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF721T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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