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BF720,115

NXP Semiconductors

BF720,115 by NXP Semiconductors

The NXP Semiconductors BF720,115 is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 50. Ideal for amplifier applications, it has a max collector-emitter voltage of 300V and operates up to 150°C. With a package style of small outline, it features GULL WING terminals in a RECTANGULAR shape.

Median Price

$0.375

Lifecycle Status

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22

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1k+

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Future Electronics

Canada . 999 parts In-Stock

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$0.440

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$0.440

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DigiKey

USA . 463 parts In-Stock

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$0.660

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$0.263

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Mouser Electronics

USA . 8,717 parts In-Stock

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$1.190

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$0.285

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$1.190

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Newark

USA . 320 parts In-Stock

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$1.360

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Verical

USA . 67,000 parts In-Stock

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$0.277

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Rochester

USA . 67,000 parts In-Stock

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$0.299

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$0.248

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$0.299

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Chip1Stop

Japan . 3,000 parts In-Stock

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$0.152

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Arrow

USA . 1,000 parts In-Stock

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$0.125

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TTI

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Farnell

UK . 395 parts In-Stock

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$0.375

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$0.277

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$0.271

395

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$0.271

Element14

Singapore . 395 parts In-Stock

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$0.619

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$0.455

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$0.446

395

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Digiode

USA . 513 parts In-Stock

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$0.370

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Chip Stock

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NAC Semi

USA . 19,798 parts In-Stock

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$0.750

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$0.750

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Vyrian

USA . 9,134 parts In-Stock

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Bristol Electronics

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VNN

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Anansix

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TME

Poland . 1,000 parts In-Stock

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$0.181

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IBS Electronics

USA . 999 parts In-Stock

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$0.146

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$0.142

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ACDS - Activité Composants Distribution Service

France . 480 parts In-Stock

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Nova Conductors

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Ampacity Inc.

Singapore . 6,492 parts In-Stock

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$0.098

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Corphita

USA . 3,879 parts In-Stock

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$0.351

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AZTECH Wire

Italy . 9,134 parts In-Stock

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Continental Prestige Electronics

USA . 450 parts In-Stock

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$0.217

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Corohmni

South Africa . 61 parts In-Stock

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UNI Independent Distributors

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QUARKTWIN TECHNOLOGY LTD

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GreenTree Electronics

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Speed Components Ltd (Excess)

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A-Z Elektronik GmbH

Germany . 5,507 parts In-Stock

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Argo Parts USA

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Glotronic Ltd.

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Supply Digital

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Perfect Parts

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Aranea Global

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Cyclops Electronics Ltd (Excess)

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480

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Overview

Unlock the power of your electronics with NXP Semiconductors' BF720,115 Small Signal Bipolar Junction Transistor. Perfect for amplifier applications, this NPN transistor offers high-quality performance and reliability in a compact package. With a maximum VCEsat of 0.6V and a minimum DC current gain of 50, this transistor delivers exceptional value and efficiency. Whether you're a hobbyist or a professional, the BF720,115 is sure to enhance your projects and take your designs to the next level. Experience the benefits of NXP Semiconductors' cutting-edge technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration allows for a positive current flow, making it compatible with most electronic circuits.

Transistor Application: AMPLIFIER

Designed for amplifier applications, ensuring efficient signal amplification and low distortion.

Surface Mount: YES

The surface mount capability makes it easy to integrate into circuit boards, saving space and reducing assembly time.

Maximum VCEsat: 0.6 V

Low maximum VCEsat value indicates minimal saturation voltage, leading to efficient operation and lower power consumption.

Minimum DC Current Gain (hFE): 50

With a minimum DC current gain of 50, this transistor provides consistent and reliable amplification performance.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating allows for safe operation in high voltage circuits.

Maximum Power Dissipation (Abs): 1.5 W

The maximum power dissipation of 1.5 W ensures the transistor can handle high power levels without overheating.

Nominal Transition Frequency (fT): 60 MHz

The high nominal transition frequency enables the transistor to perform well in high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF720,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.6 pF

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BF720,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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