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BF721T1

Onsemi

BF721T1 by Onsemi

BF721T1 by Onsemi is a PNP BJT with 4 terminals in a small outline package. It has a max power dissipation of 1.5W, hFE of 50, and VCE of 300V. Ideal for applications requiring high collector current and low transition frequency up to 60MHz at temperatures up to 150 °C.

Median Price

$0.119

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 800 parts In-Stock

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$0.119

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$0.125

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Zilex Electronics Inc.

Canada . 2,000 parts In-Stock

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Digiode

USA . 1,414 parts In-Stock

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Vyrian

USA . 106 parts In-Stock

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Corohmni

South Africa . 304 parts In-Stock

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Native Components

USA . 620 parts In-Stock

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$0.454

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$0.436

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$0.436

Northwest PG Solutions

USA . 525 parts In-Stock

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$0.500

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$0.441

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$0.441

Kulean Microsystems

USA . 8,153 parts In-Stock

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TANS Electronics

Latvia . 4,902 parts In-Stock

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SupplyDigital Components

Austria . 4,684 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Corphita

USA . 2,017 parts In-Stock

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Problanco Electronics

Mexico . 1,094 parts In-Stock

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UHIMA Technologies

Türkiye . 307 parts In-Stock

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Overview

Elevate your electronic projects with the BF721T1 from Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability. Designed for efficiency and precision, this PNP transistor is perfect for a wide range of applications, from audio amplification to signal processing. With a maximum collector-emitter voltage of 300V and a maximum power dissipation of 1.5W, this transistor delivers outstanding results while ensuring longevity and durability. Trust Onsemi's expertise and innovation to bring value and superior performance to your designs with the BF721T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

Allows for easy configuration in circuits requiring PNP transistors.

Configuration: SINGLE

Simplified circuit design and ease of use.

Surface Mount: YES

Suitable for automated assembly and compact PCB designs.

Maximum Power Dissipation (Abs): 1.5 W

Can handle moderate power levels, suitable for many small signal applications.

Minimum DC Current Gain (hFE): 50

Provides consistent and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Can operate in a wide range of temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 300 V

Can withstand high voltage levels, making it versatile for various applications.

Transistor Element Material: SILICON

Highly reliable material for transistors, ensuring longevity and stable performance.

Maximum Collector Current (IC): 0.05 A

Able to handle moderate currents in circuit applications.

Nominal Transition Frequency (fT): 60 MHz

Suitable for applications requiring high-frequency operation, such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF721T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BF721T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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