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BF722

NXP Semiconductors

BF722 by NXP Semiconductors

The NXP Semiconductors BF722 is a NPN BJT transistor with a max VCEsat of 0.6V, ideal for amplifier applications. With a min hFE of 50 and max IC of 0.1A, it operates at temperatures up to 150°C. Its small outline package style and high transition frequency of 60MHz make it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Chip Stock

USA . 180,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 14,000 parts In-Stock

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Vyrian

USA . 5,700 parts In-Stock

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Digiode

USA . 5,467 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 2,289 parts In-Stock

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VNN

France . 1,565 parts In-Stock

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Anansix

USA . 1,079 parts In-Stock

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ComSIT Distribution GmbH

Germany . 720 parts In-Stock

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720

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ComSIT USA

USA . 720 parts In-Stock

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720

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Semtec, LLC

USA . 572 parts In-Stock

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Bristol Electronics

USA . 519 parts In-Stock

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519

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PC Components Company LLC

USA . 300 parts In-Stock

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300

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DF Sales Co.

USA . 300 parts In-Stock

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300

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DF Sales Co.

USA . 300 parts In-Stock

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Nova Conductors

Japan . 70 parts In-Stock

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Pegasus Components GmbH

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Modulus Dynamics

Lithuania . 10,131 parts In-Stock

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$1.073

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$1.030

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$0.987

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AZTECH Wire

Italy . 11,587 parts In-Stock

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One Stop Electronics

USA . 1,644 parts In-Stock

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Kepictronics

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Corphita

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Alle Elektronik GmbH

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ChipTracer

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Aranea Global

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Overview

Unlock exceptional performance and reliability with the NXP Semiconductors BF722, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) designed for amplifier applications. Manufactured using high-quality materials and cutting-edge technology, this NPN transistor offers a maximum VCEsat of 0.6V and a minimum DC current gain of 50, ensuring superior efficiency and functionality. With a maximum operating temperature of 150°C and a peak reflow temperature of 260°C, the BF722 is built to withstand even the most demanding conditions. Trust NXP Semiconductors to deliver unmatched value and innovation with the BF722 - your ultimate solution for high-performance electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor ideal for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes integration into larger systems easier.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in audio and signal amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving space and improving overall circuit reliability.

Maximum VCEsat: 0.6 V

Low VCEsat value means lower power dissipation and improved efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape offers easy mounting and integration into circuit designs.

No. of Terminals: 4

4 terminals provide flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation capability ensures reliable operation under various load conditions.

Maximum Collector-Emitter Voltage: 250 V

With a high voltage rating, this transistor can handle a wide range of power supply voltages in amplifier circuits.

Nominal Transition Frequency (fT): 60 MHz

The high transition frequency allows for high-speed switching and amplification in various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BF722 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1.6 pF

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BF722 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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