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7WBD3126DMR2G

Onsemi

7WBD3126DMR2G by Onsemi

The Onsemi 7WBD3126DMR2G is a Bus Driver & Transceiver with 2 functions, operating at a supply voltage of 4.5-5V. It features a propagation delay of 0.25ns and operates in temperatures ranging from -55 to 125 °C. Ideal for military-grade applications requiring fast signal transmission in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,291 parts In-Stock

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Vyrian

USA . 147 parts In-Stock

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SupplyDigital Components

Austria . 6,411 parts In-Stock

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Kulean Microsystems

USA . 3,295 parts In-Stock

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Problanco Electronics

Mexico . 2,377 parts In-Stock

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Northwest PG Solutions

USA . 2,127 parts In-Stock

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Corphita

USA . 1,380 parts In-Stock

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TANS Electronics

Latvia . 1,116 parts In-Stock

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UHIMA Technologies

Türkiye . 706 parts In-Stock

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Native Components

USA . 538 parts In-Stock

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Corohmni

South Africa . 442 parts In-Stock

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Microchip USA

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Overview

Upgrade your electronics with the 7WBD3126DMR2G by Onsemi, a top-tier manufacturer known for quality and reliability. This bus driver & transceiver is ideal for various applications, offering seamless operation and outstanding performance. With a range of features and benefits, it provides value to customers looking for efficiency and precision in their projects. Experience the advantages of this product today and take your designs to the next level with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for use in various applications.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 4.5

The nominal supply voltage of 4.5V ensures efficient power usage and compatibility with a wide range of systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand challenging environmental conditions, ensuring reliability and longevity.

Propagation Delay (tpd): 0.25 ns

The low propagation delay of 0.25ns results in fast signal transmission, reducing latency and improving overall performance.

Temperature Grade: MILITARY

Having a military-grade temperature range indicates that this product is designed to meet strict standards for ruggedness and reliability in harsh environments.

Technical Specifications

Bus Driver & Transceivers 7WBD3126DMR2G attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Family:

CBT/FST/QS/5C/B

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Bits:

2

No. of Functions:

2

No. of Ports:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay (tpd):

.25 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

7WBD3126DMR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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