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2N5484RL1

Onsemi

2N5484RL1 by Onsemi

2N5484RL1 by Onsemi is an N-CHANNEL FET with 16 dB Gp, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring DEPLETION MODE operation, it has a max ID of 0.03 A and Crss of 1 pF, housed in a CYLINDRICAL package with THROUGH-HOLE terminals.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Kulean Microsystems

USA . 6,951 parts In-Stock

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SupplyDigital Components

Austria . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 2,343 parts In-Stock

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Northwest PG Solutions

USA . 2,256 parts In-Stock

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TANS Electronics

Latvia . 1,952 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 327 parts In-Stock

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Native Components

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Corohmni

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Overview

Looking to amplify your signal with precision and reliability? Look no further than the 2N5484RL1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and performance in their RF Small Signal Field Effect Transistors. Ideal for amplifier applications, this N-channel transistor operates in depletion mode with a maximum drain current of 0.03 A. With ultra-high frequency capabilities and a minimum power gain of 16 dB, this transistor offers unparalleled value and benefits for your projects. Trust Onsemi to provide the quality and innovation you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and faster switching speeds, making them ideal for high-frequency applications.

Minimum Power Gain (Gp): 16 dB

The minimum power gain of 16 dB indicates that this transistor can amplify signals efficiently, making it suitable for amplifier applications.

Operating Mode: DEPLETION MODE

Depletion mode transistors offer a wide range of operating voltages and high input impedance, making them versatile for different circuit designs.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

The ultra-high frequency band capabilities make this transistor suitable for demanding applications that require fast signal processing.

Maximum Drain Current (ID): 0.03 A

With a maximum drain current of 0.03 A, this transistor can handle moderate power levels while maintaining stable performance.

Maximum Feedback Capacitance (Crss): 1 pF

The low feedback capacitance of 1 pF minimizes signal distortion and ensures high-frequency performance of the transistor.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N5484RL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

1 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Minimum Power Gain (Gp):

16 dB

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N5484RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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