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2N5064RLRMG

Onsemi

2N5064RLRMG by Onsemi

2N5064RLRMG by Onsemi is a SCR with max DC Gate Trigger Current of 0.2mA, Non Repetitive Peak On-state Current of 10A, and Max RMS On-state Current of 0.8A. It is used in applications requiring reliable switching at temperatures ranging from -40 to 110 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,051 parts In-Stock

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Digiode

USA . 1,969 parts In-Stock

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Native Components

USA . 119 parts In-Stock

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$0.261

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$0.251

119

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Northwest PG Solutions

USA . 1,110 parts In-Stock

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$0.288

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$0.254

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$0.288

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$0.254

Ampacity Inc.

Singapore . 320 parts In-Stock

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$16.100

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$16.100

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AZTECH Wire

Italy . 997 parts In-Stock

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$20.730

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Perfect Parts

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Kulean Microsystems

USA . 7,016 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Problanco Electronics

Mexico . 1,834 parts In-Stock

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Corphita

USA . 1,316 parts In-Stock

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SupplyDigital Components

Austria . 1,191 parts In-Stock

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TANS Electronics

Latvia . 607 parts In-Stock

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Corohmni

South Africa . 273 parts In-Stock

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UHIMA Technologies

Türkiye . 266 parts In-Stock

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Overview

Discover the power of the 2N5064RLRMG by Onsemi, a top-quality Silicon Controlled Rectifier that offers unparalleled performance. Manufactured by Onsemi, a renowned leader in semiconductor technology, this SCR is ideal for a variety of applications. With a maximum on-state current of 0.51 A and a non-repetitive peak on-state current of 10 A, this product delivers exceptional reliability and efficiency. Whether you're in need of a reliable trigger device for your electronics or looking to enhance your industrial equipment, the 2N5064RLRMG is the perfect solution. Experience the value and benefits of this cutting-edge technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the SCR, ensuring reliable performance over time.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current allows for efficient control and activation of the SCR, minimizing power consumption.

Configuration: SINGLE

Simplified single configuration design makes installation and operation straightforward and user-friendly.

Non Repetitive Peak On-state Current: 10 A

Capable of handling high peak currents, making it suitable for applications requiring robust performance.

Package Shape: ROUND

The round shape of the package offers ease of installation and compatibility with various mounting options.

Maximum On-state Current: 0.51 A

Allows for moderate current flow while maintaining efficiency and reliability in operation.

Maximum Leakage Current: 0.01 mA

Low leakage current ensures minimal power loss when the SCR is in the off-state, improving energy efficiency.

Repetitive Peak Reverse Voltage: 200 V

With a high reverse voltage rating, the SCR can withstand reverse voltage without breakdown, enhancing overall reliability.

No. of Terminals: 3

Simple 3-terminal design provides easy connectivity for integration into electronic circuits or systems.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compact and space-saving dimensions, ideal for applications with limited space constraints.

Maximum Operating Temperature: 110 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Trigger Device Type: SCR

Utilizes silicon-controlled rectifier technology for precise and controlled switching of current, suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

Capable of operating in low temperature environments, making it versatile for use in different climates.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish ensures good conductivity and durability for long-term use.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy installation and connection to external circuits or devices.

Maximum RMS On-state Current: 0.8 A

Capable of handling moderate RMS currents while maintaining stable performance and efficiency.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage results in efficient and reliable control of the SCR, reducing power consumption.

Repetitive Peak Off-state Voltage: 200 V

Consistent peak off-state voltage rating ensures reliable operation across multiple cycles.

Maximum Holding Current: 5 mA

Provides a safe margin for holding current, ensuring stable operation under varying load conditions.

Nominal Circuit Commutated Turn-off Time: 30 us

Fast turn-off time allows for quick switching and control of current flow, improving overall system performance.

Peak Reflow Temperature °C: 260

Capable of withstanding high peak reflow temperatures during manufacturing processes, ensuring reliability and durability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N5064RLRMG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

30 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.51 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N5064RLRMG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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