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2N5064RLRAG

Onsemi

2N5064RLRAG by Onsemi

2N5064RLRAG by Onsemi is a SCR with max DC gate trigger current of 0.2mA, non-repetitive peak on-state current of 10A, and max repetitive peak reverse voltage of 200V. Ideal for applications requiring high reliability in power control circuits due to its low leakage current and high max operating temperature of 110 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

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Digiode

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Native Components

USA . 76 parts In-Stock

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$1.523

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Northwest PG Solutions

USA . 375 parts In-Stock

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$1.675

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AZTECH Wire

Italy . 609 parts In-Stock

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SupplyDigital Components

Austria . 7,835 parts In-Stock

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Kulean Microsystems

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Perfect Parts

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TANS Electronics

Latvia . 3,197 parts In-Stock

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Corphita

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Problanco Electronics

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Glotronic Ltd.

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Metaverse IC Inc.

Canada . 600 parts In-Stock

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UHIMA Technologies

Türkiye . 568 parts In-Stock

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Overview

Unlock the power of reliable and efficient electronics with the 2N5064RLRAG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Silicon Controlled Rectifiers (SCR) that are ideal for a wide range of applications. Whether you're looking for a solution for power control or motor drives, this SCR offers the perfect balance of performance and durability. Trust Onsemi to provide innovative technology that meets your needs, ensuring smooth operations and peace of mind. Elevate your projects with the 2N5064RLRAG and experience the difference quality can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for a wide range of applications.

Maximum DC Gate Trigger Current: 0.2 mA

Low gate trigger current ensures efficient operation and helps in saving power.

Configuration: SINGLE

Simplified design and easy to manage in circuits.

Non Repetitive Peak On-state Current: 10 A

High peak current capability allows the product to handle heavy loads effectively.

Package Shape: ROUND

Compact shape that can be easily mounted in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide sturdy connections and easy installation on PCBs.

Maximum On-state Current: 0.51 A

Adequate current rating for reliable performance in different applications.

Maximum Leakage Current: 0.01 mA

Low leakage current ensures minimal power loss and better efficiency.

Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating for handling sudden voltage spikes.

No. of Terminals: 3

Simplified connection with minimal terminals for ease of use.

Package Style (Meter): CYLINDRICAL

Cylindrical package style for easy integration and space-saving.

Maximum Operating Temperature: 110 °C

Wide operating temperature range for versatile use in different environments.

Trigger Device Type: SCR

SCR technology provides high reliability and efficiency for various applications.

Minimum Operating Temperature: -40 °C

Suitable for operation even in extreme low-temperature conditions.

Terminal Finish: TIN SILVER COPPER

Durable terminal finish for long-lasting performance and stable connections.

Terminal Position: BOTTOM

Bottom terminal position for ease of PCB mounting and secure connections.

Maximum RMS On-state Current: 0.8 A

High RMS current rating for continuous and steady operation under varying loads.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage for efficient control and operation of the SCR.

Repetitive Peak Off-state Voltage: 200 V

Consistent off-state voltage rating for safe and reliable performance.

Maximum Holding Current: 5 mA

Sufficient holding current level for maintaining the device in the off-state.

Nominal Circuit Commutated Turn-off Time: 30 us

Fast turn-off time for quick response and improved efficiency in switching applications.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperature for a specified duration without any damage.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for robust manufacturing and assembly processes.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N5064RLRAG attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

30 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.01 mA

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.51 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

40

Trigger Device Type:

SCR

Trade Compliance

2N5064RLRAG Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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