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TFF1013HN/N1,135

NXP Semiconductors

TFF1013HN/N1,135 by NXP Semiconductors

TFF1013HN/N1,135 by NXP Semiconductors is an RF/Microwave Up/Down Converter with a 5V power supply and operates b/w -40 °C to 85 °C. It features a surface mount design with 16 terminals, ideal for compact applications in communication systems. This versatile component enhances signal processing efficiency in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,653 parts In-Stock

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6,653

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Digiode

USA . 3,502 parts In-Stock

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3,502

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Anansix

USA . 737 parts In-Stock

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737

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One Stop Electronics

USA . 150 parts In-Stock

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$10.000

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150

$10.000

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AZTECH Wire

Italy . 416 parts In-Stock

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$20.300

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416

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QUARKTWIN TECHNOLOGY LTD

USA . 29,541 parts In-Stock

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29,541

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UNI Independent Distributors

Spain . 4,963 parts In-Stock

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Corphita

USA . 2,442 parts In-Stock

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Overview

Unlock unparalleled performance with the TFF1013HN/N1,135 from NXP Semiconductors. Engineered for excellence, this RF/Microwave Up/Down Converter ensures robust functionality across diverse applications, from telecommunications to industrial systems. With superior quality and reliability from a trusted leader in semiconductor technology, you benefit from enhanced signal integrity and efficiency, all while enjoying the peace of mind that comes from NXP's commitment to innovation and customer satisfaction.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability while maintaining a lightweight design, making installation and integration into various systems easier.

Power Supplies (V): 5

With a low power supply requirement of only 5V, this converter is energy-efficient and can easily be powered by standard components, reducing overall system complexity.

No. of Terminals: 16

A total of 16 terminals provides flexibility for connections, which can accommodate various circuit topologies and increase the adaptability of this device in different applications.

Maximum Operating Temperature: 85 °C

The ability to operate at a maximum temperature of 85 °C indicates robust thermal performance, making it suitable for deployment in high-temperature environments.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this product is advantageous for applications in extreme cold environments, ensuring reliable performance in a wide range of conditions.

Mounting Feature: SURFACE MOUNT

Surface mount technology allows for a compact design and easy integration into modern circuit boards, promoting efficient space usage and reducing potential solder joint failures.

Technical Specifications

RF/Microwave Up/Down Converters TFF1013HN/N1,135 attributes and parameters. Explore more RF/Microwave Up/Down Converters devices from NXP Semiconductors

Specs

Mounting Feature:

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC16,.1X.14,20

Power Supplies (V):

5

Sub-Category:

RF/Microwave Up/Down Converters

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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