Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NXP Semiconductors' MRF5S19060MR1 is a RF Power FET with 65V DS Breakdown Voltage, 218.8W Power Dissipation, and L Band Frequency. Ideal for amplifier applications in the enhancement mode, this single-channel transistor has a plastic/epoxy body and operates at up to 200°C.
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$106.881
UNI Independent Distributors
Assy Fe
This material provides good mechanical strength and insulation, making the product durable and reliable for long-term use.
N-channel transistors typically have better mobility and conductivity, resulting in higher performance and efficiency.
Single configuration simplifies the design and integration process, making it easier to use in various applications.
Designed specifically for amplifier applications, ensuring optimal performance and signal amplification.
Surface mount capability allows for easy and efficient PCB assembly, saving time and effort in manufacturing.
High breakdown voltage ensures reliable operation and protection against voltage spikes, increasing the overall robustness of the product.
Rectangular shape provides a compact form factor, allowing for efficient use of space and easy integration into electronic circuits.
Flat terminal form simplifies the soldering process and ensures secure electrical connections for consistent performance.
Enhancement mode operation provides better control and efficiency in switching applications, making the product suitable for high-performance scenarios.
Designed for L band frequencies, which is commonly used in communication and radar systems, making it a versatile choice for various RF applications.
Four terminals offer flexibility in circuit connections and enable more advanced circuit designs for specific requirements.
High power dissipation capability allows the transistor to handle large power levels without overheating, ensuring reliable operation under demanding conditions.
Flatpack package style offers good thermal performance and easy thermal management, contributing to overall efficiency and reliability.
Metal-oxide semiconductor technology provides excellent characteristics for RF power transistors, offering high efficiency and performance in amplification applications.
High maximum operating temperature allows the transistor to operate in harsh environments and high temperature conditions without performance degradation.
Silicon material ensures good thermal stability and reliability, making the transistor suitable for long-term operation in various applications.
Tin/lead terminal finish provides good solderability and ensures secure electrical connections for optimal performance and reliability.
Dual terminal position offers flexibility in mounting and circuit connections, allowing for versatile use in different PCB layouts and configurations.
MSL level 3 indicates moderate sensitivity to moisture, ensuring proper handling and storage to maintain the quality and reliability of the product.
Source connection provides a common reference point for the circuit, simplifying the design and ensuring stable and accurate operation in amplification applications.
Reflow temperature tolerance of 40 seconds allows for reliable soldering during assembly, ensuring proper connections and long-term performance.
High peak reflow temperature capability of 260°C enables efficient and reliable soldering during assembly, ensuring strong and durable connections.
RF Power Field Effect Transistors (FET) MRF5S19060MR1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from NXP Semiconductors
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MRF5S19060MR1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
2N7002
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
BAV99
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138-TP
Micro Commercial Components
BSS138-TP by Micro Commercial Components is a N-channel small signal FET with a min DS breakdown voltage of 50V and max drain current of 0.22A. It is commonly used in applications requiring enhancement mode operation, such as power management and switching circuits.
LL4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMMBT2222ALT1G
Onsemi
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
LM317TG
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Minimum Input-Output Voltage Differential: 3 V; Qualification Status: Not Qualified; No. of Functions: 1;
SMBJ18CA
Bytesonic Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
USBLC6-2SC6
STMicroelectronics
USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.
LM78L05ACMX/NOPB
Texas Instruments
LM78L05ACMX/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 0.1A. It operates b/w 0-125°C, has a dropout voltage of 1.6V, and can handle input voltages up to 30V making it ideal for various electronic applications requiring stable power supply.
Multicomp Pro
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Diode Element Material: SILICON; Technology: AVALANCHE; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V;
BSS138K-13
Diodes Incorporated
BSS138K-13 by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, operating in enhancement mode. With 3 terminals and 0.31A max drain current, it offers high performance in small outline package style.
1N4148
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138
Calogic
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .2 A;
KSZ9031RNXIC
Micrel
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE;
MBR0530T1G
MBR0530T1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring high-speed switching in compact electronic devices like smartphones and tablets. The package style is small outline with gull wing terminals for surface mount assembly.
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
Shenzhen Socay Electronics
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
1N4148WS-7-F
1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.
PD54008L
PD54008L by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount device excels in high-power scenarios with a dissipation of up to 44 W.
934064995112
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: S BAND; Minimum DS Breakdown Voltage: 65 V;
LET9002
LET9002 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in enhancing performance while managing up to 4 W power dissipation.
A5G35H110NT4
RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;
MRF1513NT1
NXP Semiconductors' MRF1513NT1 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. Featuring a SINGLE configuration, it has a 2A Drain Current and 31.2W Power Dissipation in a PLASTIC/EPOXY package with NO LEAD terminals.
BLF888DU
Ampleon Netherlands B V
BLF888DU by Ampleon Netherlands B V is an N-CHANNEL RF Power FET with 104V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. This CERAMIC, METAL-SEALED COFIRED transistor has a RECTANGULAR package style and is suitable for surface mount with FLAT terminals.
STAC4932F1MR
RF Power Field-Effect Transistors;
MRF171A
New Jersey Semiconductor Products
N-CHANNEL; Configuration: SINGLE; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Elements: 1; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
AFT05MS003NT1
AFT05MS003NT1 by NXP Semiconductors is an N-CHANNEL RF Power FET with 30V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. This SINGLE configuration transistor has a max operating temperature of 150°C and a min of -40°C, making it suitable for various electronic devices.
A2V09H400-04NR3
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Terminal Finish: TIN;
A3T18H408W24SR3
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
934055916112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED;
PD57060S
PD57060S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
MRFE6VP5600HR6
Freescale Semiconductor
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1670 W; Minimum DS Breakdown Voltage: 130 V; JESD-30 Code: R-CDFM-F4;
STAP57100
STAP57100 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 14 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its robust ceramic-metal sealed package ensures reliable performance up to 165 °C.
MRF136
Tyco Electronics M/a-com
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-CRFM-F4; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;
CGHV40030F
Wolfspeed
CGHV40030F by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage and 15dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring GALLIUM NITRIDE technology, it operates from -40 to 85 °C with a max ID of 4.2A and 0.15pF Crss for high-performance needs.
PD55035STR1-E
MRF136Y
Motorola
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
BLF6G10S-45,112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
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MRF5P21180
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 437.5 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
MRF5P21180HR6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 530 W; JESD-30 Code: R-CDFM-F4; Qualification: Not Qualified;
MRF5S19100LR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 236 W; Case Connection: SOURCE; Minimum DS Breakdown Voltage: 65 V;
MRF5S19060NBR1
NXP's MRF5S19060NBR1 is a single N-channel RF FET with 65V DS breakdown voltage, ideal for amplifier applications in L Band. It features 218.8W max power dissipation, operates in enhancement mode, and has a max temp of 200°C.
MRF5S19100HR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 269 W; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: DUAL;
MRF5S19060MBR1
NXP Semiconductors' MRF5S19060MBR1 is a RF Power FET with 65V DS breakdown voltage, suitable for L Band applications. It operates in enhancement mode, with 218.8W max power dissipation and can withstand up to 200°C operating temperature. Ideal for amplifier circuits due to its N-Channel configuration and flatpack package style.
MRF5S19100LSR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 236 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR;
MRF5P20180R6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 407 W; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 65 V;
MRF5P21180R6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 437.5 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: SILICON;
MRF5S19060NR1
NXP Semiconductors' MRF5S19060NR1 is a single N-channel RF Power FET with 65V DS breakdown voltage. Operating in enhancement mode, it offers 218.8W power dissipation and operates in L band applications like amplifiers. The transistor has a max temperature of 200°C and comes in a flatpack package style for surface mount assembly.
MRF5S19090HR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 266 W; Package Style (Meter): FLANGE MOUNT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MRF5S19090LSR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 261 W; No. of Elements: 1; Qualification: Not Qualified;
MRF5P21240R6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Qualification: Not Qualified; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MRF5S19100HSR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 269 W; Maximum Time At Peak Reflow Temperature (s): 40; Highest Frequency Band: L BAND;
MRF5S19090HSR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 266 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER;
MRF5P20180HR6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 530 W; Terminal Form: FLAT; Package Shape: RECTANGULAR;
MRF5P21045NR1
NXP Semiconductors' MRF5P21045NR1 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in S BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR transistor has a max temp of 200°C and comes in a PLASTIC/EPOXY package style.
MRF5P21240HR6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 603 W; JESD-30 Code: R-CDFM-F4; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
MRF5S19090LR3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 261 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 65 V;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 218.8 W; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 200 Cel;
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