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BST16-TAPE-7

NXP Semiconductors

BST16-TAPE-7 by NXP Semiconductors

BST16-TAPE-7 by NXP is a PNP power BJT designed for switching applications. It features a max VCEsat of 2V, IC of 1A, and operates up to 150 °C. This compact surface-mount transistor is ideal for efficient circuit designs in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,030 parts In-Stock

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3,030

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Vyrian

USA . 1,806 parts In-Stock

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1,806

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Anansix

USA . 838 parts In-Stock

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838

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Distributors (Availability)

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Northwest PG Solutions

USA . 586 parts In-Stock

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$2.892

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586

$2.892

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One Stop Electronics

USA . 1,495 parts In-Stock

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$15.050

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1,495

$15.050

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UNI Independent Distributors

Spain . 4,538 parts In-Stock

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Corphita

USA . 776 parts In-Stock

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776

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Native Components

USA . 386 parts In-Stock

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$2.550

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Overview

Unlock superior performance with the BST16-TAPE-7 from NXP Semiconductors, a leader in innovative technology. This PNP power BJT delivers exceptional switching capabilities in a compact, surface-mount package, perfect for diverse applications. Experience reliability and efficiency like never before, as this transistor operates flawlessly at high temperatures and supports demanding tasks. Choose quality, choose NXP, and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for versatile applications in analog circuits, making it ideal for efficient signal amplification.

Configuration: SINGLE

A single configuration simplifies circuit design while maintaining reliability for basic switching applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can effectively control power flow, enhancing operational efficiency.

Surface Mount: YES

The surface mount capability allows for compact PCB designs and easier automated assembly, which is ideal for modern electronic devices.

Maximum VCEsat: 2 V

A low VCEsat ensures high power efficiency during operation, reducing energy loss and improving thermal management.

Package Shape: RECTANGULAR

A rectangular package shape supports easier integration into various electronic designs and optimizes space utilization on PCBs.

Terminal Form: FLAT

Flat terminals enhance the ease of soldering and improve electrical contact, contributing to a reliable performance in circuits.

No. of Terminals: 3

The standard 3-terminal design (Emitter, Base, Collector) aligns with common circuit configurations, facilitating compatibility with existing designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style provides a compact footprint, making it suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 30

A minimum hFE of 30 ensures adequate amplification, enhancing signal integrity and overall performance in amplifying circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature increases reliability and performance in demanding environments, suitable for industrial applications.

Maximum Collector-Base Capacitance: 15 pF

With a low collector-base capacitance, this transistor minimizes signal distortion, ensuring high-frequency operation is reliable.

Maximum Collector-Emitter Voltage: 300 V

A maximum voltage rating of 300 V allows this transistor to be used in high-voltage applications, ensuring versatility in different circuit designs.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and thermal stability, making it a preferred choice for most electronic applications.

Maximum Collector Current (IC): 1 A

A collector current of up to 1 A is sufficient for many practical applications, allowing for robust performance in power control circuits.

Terminal Position: SINGLE

Single terminal position simplifies layout design, providing ease of use during prototyping and manufacturing.

Case Connection: COLLECTOR

Collector case connection provides a stable reference point, enhancing the reliability of the transistor in various configurations.

Nominal Transition Frequency (fT): 15 MHz

A nominal transition frequency of 15 MHz supports high-speed switching applications, ideal for modern digital systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BST16-TAPE-7 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

BST16-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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