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BST16-TAPE-13

NXP Semiconductors

BST16-TAPE-13 by NXP Semiconductors

BST16-TAPE-13 by NXP is a PNP power BJT designed for switching applications. It features a max VCEsat of 2V, IC of 1A, and operates up to 150 °C. This compact surface mount transistor is ideal for efficient circuit designs in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,952 parts In-Stock

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Vyrian

USA . 2,713 parts In-Stock

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2,713

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Anansix

USA . 1,132 parts In-Stock

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Native Components

USA . 906 parts In-Stock

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$1.430

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906

$1.430

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Northwest PG Solutions

USA . 256 parts In-Stock

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$1.573

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256

$1.573

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One Stop Electronics

USA . 651 parts In-Stock

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$51.050

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651

$51.050

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UNI Independent Distributors

Spain . 8,077 parts In-Stock

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Corphita

USA . 1,940 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the BST16-TAPE-13 from NXP Semiconductors, a leader in innovation. This high-quality PNP bipolar junction transistor excels in switching applications, delivering reliability and efficiency under demanding conditions. With its compact, surface-mount design, it seamlessly integrates into your projects, ensuring optimal performance while simplifying assembly. Trust NXP's commitment to excellence and elevate your solutions with this outstanding component!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for versatility in circuit design, enabling efficient control in various switching applications.

Configuration: SINGLE

A single configuration simplifies integration into circuits, making it a cost-effective solution for various designs.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor provides reliable performance and efficiency in controlling power flow.

Surface Mount: YES

Surface mount capability allows for compact designs and automatic assembly, which minimizes production costs and improves manufacturing efficiency.

Maximum VCEsat: 2 V

A low VCEsat value indicates high efficiency during operation, reducing power loss in switching applications.

Package Shape: RECTANGULAR

The rectangular shape offers effective space utilization on PCBs, allowing for more components in smaller areas.

Terminal Form: FLAT

Flat terminals facilitate better contact and soldering during assembly, contributing to the reliability of the connections.

No. of Terminals: 3

With three terminals, this transistor is versatile and easy to integrate into various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline packages help reduce the overall footprint on PCBs, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 30

A minimum hFE of 30 ensures decent amplification capabilities, allowing for effective control of larger currents.

Maximum Operating Temperature: 150 °C

With a high operating temperature limit, this transistor can function reliably in demanding environments, enhancing its applicability.

Maximum Collector-Base Capacitance: 15 pF

A low collector-base capacitance contributes to better frequency response, making it suitable for high-speed applications.

Maximum Collector-Emitter Voltage: 300 V

This high voltage rating allows the transistor to be used in a wide range of applications, including high-power circuits.

Transistor Element Material: SILICON

Silicon as the element material ensures good performance characteristics and a reliable lifespan in a variety of operating conditions.

Maximum Collector Current (IC): 1 A

Capable of handling up to 1 A, this transistor is versatile for various power applications, making it a solid choice for multiple circuit designs.

Terminal Position: SINGLE

Single terminal position simplifies the layout and design process, making it user-friendly for designers.

Case Connection: COLLECTOR

Collector case connection facilitates efficient thermal management, enhancing performance and longevity.

Nominal Transition Frequency (fT): 15 MHz

With a nominal transition frequency of 15 MHz, this transistor is suitable for RF and fast switching applications, ensuring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BST16-TAPE-13 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

BST16-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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