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BST15-TAPE-7

NXP Semiconductors

BST15-TAPE-7 by NXP Semiconductors

BST15-TAPE-7 by NXP Semiconductors is a PNP BJT designed for switching applications. It features a max VCEsat of 2.5V, IC of 1A, and operates up to 150 °C. This compact surface-mount transistor is ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,872 parts In-Stock

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3,872

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Vyrian

USA . 2,779 parts In-Stock

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2,779

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Anansix

USA . 204 parts In-Stock

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Native Components

USA . 427 parts In-Stock

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$0.206

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$0.198

427

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Northwest PG Solutions

USA . 1,897 parts In-Stock

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$0.227

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$0.200

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One Stop Electronics

USA . 1,190 parts In-Stock

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$61.050

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1,190

$61.050

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UNI Independent Distributors

Spain . 7,346 parts In-Stock

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Corphita

USA . 4,803 parts In-Stock

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Overview

Elevate your projects with the BST15-TAPE-7 from NXP Semiconductors, a powerhouse in the world of electronics. This high-quality PNP transistor excels in switching applications, delivering efficiency and reliability you can trust. With its compact design and robust performance, it’s perfect for space-constrained environments. Choose NXP for proven innovation and enjoy enhanced performance that adds real value to your designs. Transform your ideas into reality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and lightweight design, making it suitable for various electronic applications.

Polarity or Channel Type: PNP

The PNP configuration allows for effective current control in a high side switching application, which is beneficial for many circuit designs.

Configuration: SINGLE

A single configuration simplifies design and reduces the footprint on the PCB, making integration easier.

Transistor Application: SWITCHING

Optimized for switching applications, this BJT is ideal for efficient on/off control in power circuits.

Surface Mount: YES

Surface mount technology allows for automated assembly and saves space on the circuit board, enhancing manufacturing efficiency.

Maximum VCEsat: 2.5 V

A low VCEsat value ensures minimal power loss during operation, improving overall energy efficiency in applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for compact layouts and facilitates effective heat dissipation.

Terminal Form: FLAT

Flat terminals provide easy soldering and enhance electrical contact reliability in surface mount applications.

No. of Terminals: 3

With three terminals, this BJT is versatile for multiple circuit configurations and applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style conserves board space while maintaining good performance characteristics.

Minimum DC Current Gain (hFE): 30

A minimum current gain of 30 ensures adequate amplification for a range of applications, making it effective in signal processing.

Maximum Operating Temperature: 150 °C

A high operating temperature rating enhances the reliability of the BJT in demanding environments.

Maximum Collector-Base Capacitance: 15 pF

Low capacitance contributes to faster switching times, making the transistor suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 200 V

High voltage rating allows this BJT to be used in various high-voltage applications without risk of breakdown.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and thermal stability, ensuring the transistor's efficient performance.

Maximum Collector Current (IC): 1 A

A collector current rating of 1 A makes it suitable for driving loads in power management applications.

Terminal Position: SINGLE

Single terminal position eases layout design and simplifies circuit integration.

Case Connection: COLLECTOR

The collector connection point allows for simplified circuit design and better heat dissipation in high-power applications.

Nominal Transition Frequency (fT): 15 MHz

A transition frequency of 15 MHz supports a wide range of frequencies, making it suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BST15-TAPE-7 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2.5 V

Trade Compliance

BST15-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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