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BST15-TAPE-13

NXP Semiconductors

BST15-TAPE-13 by NXP Semiconductors

BST15-TAPE-13 by NXP is a PNP BJT designed for switching applications, featuring a max VCEsat of 2.5V and IC of 1A. It operates up to 150 °C with a nominal fT of 15MHz. This compact, surface-mount transistor is ideal for efficient power management in electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,383 parts In-Stock

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Anansix

USA . 2,591 parts In-Stock

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2,591

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Vyrian

USA . 53 parts In-Stock

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53

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Native Components

USA . 296 parts In-Stock

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$0.078

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$0.074

296

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$0.074

Northwest PG Solutions

USA . 480 parts In-Stock

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$0.085

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$0.075

480

$0.085

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$0.075

One Stop Electronics

USA . 676 parts In-Stock

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$57.050

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676

$57.050

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UNI Independent Distributors

Spain . 5,501 parts In-Stock

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Corphita

USA . 2,690 parts In-Stock

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2,690

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Overview

Elevate your projects with the BST15-TAPE-13 from NXP Semiconductors, a trusted leader in innovative technology. This high-quality PNP power transistor is designed for seamless switching applications, ensuring reliability and efficiency in your circuits. With its compact surface-mount design and robust performance capabilities, you’ll enjoy superior thermal management and reduced space requirements. Unlock unparalleled value and elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the packaging provides durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: PNP

Being a PNP transistor, it is ideal for high-side switching applications, providing enhanced control in certain circuit configurations.

Configuration: SINGLE

A single configuration ensures simplicity in design and reduces complexity in the circuit, making it a great choice for straightforward applications.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor is perfect for tasks like motor control and signal amplification, enhancing performance in those areas.

Surface Mount: YES

The surface mount capability allows for compact designs and is ideal for automated assembly processes, leading to reduced manufacturing costs.

Maximum VCEsat: 2.5 V

With a relatively low VCEsat, this transistor can operate efficiently with minimal power loss, ensuring energy-efficient performance.

Package Shape: RECTANGULAR

The rectangular shape is advantageous for efficient use of PCB real estate and allows for better thermal performance due to increased surface area.

Terminal Form: FLAT

Flat terminal design ensures good solderability and reliable electrical connections, which enhances the longevity of the product.

No. of Terminals: 3

Three terminals simplify connection in circuit designs, making it easier to implement and integrate into various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for space-constrained applications, facilitating the design of compact electronic devices.

Minimum DC Current Gain (hFE): 30

A minimum hFE of 30 provides sufficient amplification for low-power signals, making it suitable for diverse circuit applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature indicates suitability for use in harsh environments, enhancing reliability in various thermal conditions.

Maximum Collector-Base Capacitance: 15 pF

A low collector-base capacitance minimizes signal degradation and allows for faster switching speeds, ideal for high-frequency applications.

Maximum Collector-Emitter Voltage: 200 V

With a high VCE maximum rating, this transistor can safely handle significant voltage levels, providing versatility across many applications.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance characteristics, including robustness and thermal stability, making them the preferred choice for most applications.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle moderate loads, making it suitable for numerous applications requiring adequate current handling.

Terminal Position: SINGLE

A single terminal position simplifies PCB design by reducing layout complexity and making the integration smoother.

Case Connection: COLLECTOR

With the collector connected directly to the case, heat dissipation is efficient, aiding in the reliability and longevity of the component.

Nominal Transition Frequency (fT): 15 MHz

A transition frequency of 15 MHz makes this transistor suitable for applications requiring moderate speed, allowing for effective signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BST15-TAPE-13 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2.5 V

Trade Compliance

BST15-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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