Loading...

BSR31-TAPE-7

NXP Semiconductors

BSR31-TAPE-7 by NXP Semiconductors

BSR31-TAPE-7 from NXP Semiconductors is a PNP power BJT designed for switching applications. It features a max VCEsat of 0.5V, operates up to 150 °C, and supports collector currents up to 1A. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,176 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,176

-

-

-

-

Vyrian

USA . 3,408 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,408

-

-

-

-

Anansix

USA . 240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

240

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 332 parts In-Stock

1+ parts

$57.050

100+ parts

-

1k+ parts

-

10k+ parts

-

332

$57.050

-

-

-

Corphita

USA . 2,605 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,605

-

-

-

-

Northwest PG Solutions

USA . 1,180 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,180

-

-

-

-

UNI Independent Distributors

Spain . 1,056 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,056

-

-

-

-

Native Components

USA . 754 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

754

-

-

-

-

Overview

Elevate your designs with the BSR31-TAPE-7 from NXP Semiconductors—an exceptional PNP power transistor that delivers reliability and efficiency for your switching applications. Crafted with precision and quality, this surface-mount device ensures optimal performance even in demanding conditions, making it ideal for consumer electronics, automotive systems, and industrial automation. Experience enhanced value and peace of mind, knowing you're backed by a trusted leader in semiconductor innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures robust protection for the internal components, enhancing reliability in various applications.

Polarity or Channel Type: PNP

The PNP configuration is ideal for various switching applications, making it versatile for specific circuit needs.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, suitable for a variety of uses.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor ensures efficient control of current flow in devices.

Surface Mount: YES

Surface mount capability allows for compact designs, making it easier to integrate into modern electronics.

Maximum VCEsat: 0.5 V

A low VCEsat value indicates reduced power loss during operation, leading to improved energy efficiency in circuits.

Package Shape: RECTANGULAR

The rectangular shape provides a stable footprint for easy placement on PCBs and consistent performance.

Terminal Form: FLAT

Flat terminals facilitate easier soldering and ensure good electrical connections when mounted on surfaces.

No. of Terminals: 3

Three terminals make it straightforward to implement in standard circuit designs, enhancing flexibility in applications.

Package Style (Meter): SMALL OUTLINE

The small outline package is designed for space-constrained applications, allowing for higher density mounting.

Minimum DC Current Gain (hFE): 50

A minimum hFE of 50 ensures adequate amplification of signals, making it suitable for various applications.

Maximum Operating Temperature: 150 °C

The high operating temperature limit ensures reliability and performance in demanding environments.

Maximum Collector-Base Capacitance: 20 pF

Low capacitance contributes to faster switching speeds, improving the performance of high-frequency circuits.

Maximum Collector-Emitter Voltage: 60 V

A maximum VCE rating of 60 V ensures adequate handling of voltage spikes, making it safe for diverse applications.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties, ensuring consistent performance and longevity.

Maximum Turn On Time (ton): 500 ns

Fast turn-on time allows for quick response in switching applications, providing better overall performance.

Maximum Collector Current (IC): 1 A

With a collector current rating of 1 A, this transistor can effectively handle typical load requirements in various circuits.

Maximum Turn Off Time (toff): 650 ns

A reasonable turn-off time contributes to reduced delay in switching applications, enhancing circuit responsiveness.

Terminal Position: SINGLE

Single terminal position ensures streamlined circuit designs and simplifies integration into various setups.

Case Connection: COLLECTOR

Direct collector connection maximizes current handling efficiency, ensuring optimal performance.

Nominal Transition Frequency (fT): 100 MHz

A nominal transition frequency of 100 MHz makes this transistor suitable for high-speed applications, enhancing overall circuit performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BSR31-TAPE-7 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

20 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

650 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

.5 V

Trade Compliance

BSR31-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20