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BSR30-TAPE-7

NXP Semiconductors

BSR30-TAPE-7 by NXP Semiconductors

BSR30-TAPE-7 by NXP Semiconductors is a PNP power BJT designed for switching applications. It features a max VCEsat of 0.5V, operates up to 150 °C, and supports collector currents up to 1A. Its compact surface mount design ensures efficient performance in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,396 parts In-Stock

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Digiode

USA . 1,802 parts In-Stock

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Anansix

USA . 1,684 parts In-Stock

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One Stop Electronics

USA . 1,054 parts In-Stock

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Corphita

USA . 4,903 parts In-Stock

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UNI Independent Distributors

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Native Components

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Northwest PG Solutions

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Overview

Unlock the power of innovation with the BSR30-TAPE-7 from NXP Semiconductors, where superior quality meets unmatched reliability. This robust PNP transistor excels in switching applications, offering efficient performance even at high temperatures. With NXP's renowned expertise and commitment to excellence, elevate your designs while enjoying enhanced energy efficiency and minimal footprint. Trust in a product that empowers your projects with precision and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures a lightweight, cost-effective, and durable package that is suitable for a variety of environments.

Polarity or Channel Type: PNP

Being a PNP type transistor, it is ideal for certain applications where positive voltages are required, making it versatile for various circuit designs.

Configuration: SINGLE

The single configuration simplifies integration into circuits and reduces the overall footprint in design.

Transistor Application: SWITCHING

Designed for switching applications, this transistor is optimal for efficient operation in power management and signal processing.

Surface Mount: YES

Surface mounting capability allows for automated assembly, saving space and reducing manufacturing costs.

Maximum VCEsat: 0.5 V

A low VCEsat indicates reduced power loss during operation, enhancing energy efficiency in applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy handling and placement on PCBs, facilitating better design integration.

Terminal Form: FLAT

Flat terminals provide a reliable connection and improve contact area, ensuring better thermal and electrical performance.

No. of Terminals: 3

With three terminals, this transistor is simple to connect and fits well in standard circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package reduces the overall size of the circuit, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 allows for amplification of input signals, beneficial for signal processing applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature ensures reliability and performance under demanding environmental conditions.

Maximum Collector-Base Capacitance: 20 pF

Low collector-base capacitance allows for high-speed operation, making it suitable for fast switching applications.

Maximum Collector-Emitter Voltage: 60 V

With a maximum CE voltage of 60 V, this transistor can effectively handle a variety of power levels in electronic circuits.

Transistor Element Material: SILICON

Silicon as the element material contributes to the transistor's efficiency and performance, making it a reliable choice for many applications.

Maximum Turn On Time (ton): 500 ns

A fast turn-on time improves response time in switching applications, enhancing overall system performance.

Maximum Collector Current (IC): 1 A

Able to handle up to 1 A of collector current, this transistor is suitable for use in various medium-power applications.

Maximum Turn Off Time (toff): 650 ns

Fast turn-off time allows for improved switching efficiency and responsiveness in circuits.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout, making it easier to integrate into different configurations.

Case Connection: COLLECTOR

Collector case connection helps facilitate effective heat dissipation, contributing to improved reliability of the device.

Nominal Transition Frequency (fT): 100 MHz

A high transition frequency indicates suitability for high-speed applications, making it versatile in RF and digital circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BSR30-TAPE-7 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

20 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

650 ns

Maximum Turn On Time (ton):

500 ns

Maximum VCEsat:

.5 V

Trade Compliance

BSR30-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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